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IPS031GTR PDF预览

IPS031GTR

更新时间: 2024-01-18 23:07:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路驱动局域网
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11页 137K
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IPS031GTR 数据手册

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Data Sheet No.PD 60150-J  
( )  
IPS031 S  
FULLY PROTECTED POWER MOSFET SWITCH  
Product Summary  
Features  
Over temperature shutdown  
Over current shutdown  
Active clamp  
Low current & logic level input  
E.S.D protection  
R
V
60m(max)  
ds(on)  
50V  
12A  
clamp  
I
shutdown  
Description  
T T  
1.5µs  
on/ off  
The IPS031/IPS031S are fully protected three terminal  
SMART POWER MOSFETs that feature over-current,  
over-temperature, ESD protection and drain to source  
®
active clamp.These devices combine a HEXFET  
Packages  
POWER MOSFET and a gate driver. They offer full  
protection and high reliability required in harsh envi-  
ronments. The driver allows short switching times  
and provides efficient protection by turning OFF the  
power MOSFET when the temperature exceeds 165oC  
or when the drain current reaches 12A. The device  
restarts once the input is cycled. The avalanche capability  
is significantly enhanced by the active clamp and covers  
most inductive load demagnetizations.  
3-Lead D2Pak  
IPS031S  
3-Lead TO-220  
IPS031  
Typical Connection  
Load  
R in series  
(if needed)  
D
IN  
control  
ƒ

S
Logic signal  
(Refer to lead assignment for correct pin configuration)  
www.irf.com  
1

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