IPS042G

更新时间： 2024-02-20 00:58:33

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数	文件大小	规格书
10页	94K
描述
DUAL FULLY PROTECTED POWER MOSFET SWITCH

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中文翻译

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技术参数
数据手册

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IPS042G 技术参数

生命周期：	Transferred	零件包装代码：	SOIC
包装说明：	SOP,	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.41
内置保护：	TRANSIENT; OVER CURRENT; THERMAL	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G8	长度：	4.9 mm
功能数量：	1	端子数量：	8
输出电流流向：	SINK	标称输出峰值电流：	1.1 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	座面最大高度：	1.75 mm
标称供电电压：	14 V	表面贴装：	YES
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	3.9 mm
Base Number Matches：	1

IPS042G 数据手册

Data Sheet No.PD 60153-J

IPS042G

DUAL FULLY PROTECTED POWER MOSFET SWITCH

Features

Product Summary

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

500mΩ (max)

ds(on)

50V

clamp

shutdown

Description

T T

on/ off

1.5µs

The IPS042G is a fully protected dual low side SMART

POWER MOSFET that features over-current, over-tem-

perature, ESD protection and drain to source active

clamp.This device combines a HEXFET POWER

MOSFET and a gate driver. It offers full protection

and high reliability required in harsh environments.

The driver allows short switching times and provides

efficient protection by turning OFF the power MOSFET

when the temperature exceeds 165^oC or when the

drain current reaches 2A. This device restarts once

the input is cycled. The avalanche capability is

significantly enhanced by the active clamp and cov-

ers most inductive load demagnetizations.

Package

8-Lead SOIC

Typical Connection

Load

R in series

(if needed)

control

Logic signal

(Refer to lead assignment for correct pin configuration)

www.irf.com

12 3 4 5 6 7...10

中文翻译

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