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IPP60R125CP_07 PDF预览

IPP60R125CP_07

更新时间: 2024-11-23 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 323K
描述
CoolMOSTM Power Transistor

IPP60R125CP_07 数据手册

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IPP60R125CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ Tj,max  
R DS(on),max  
Q g,typ  
V
650  
0.125  
53  
V
• Lowest figure-of-merit RONxQg  
• Ultra low gate charge  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO220  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is specially designed for:  
• Hard switching topologies, for Server and Telecom  
Type  
Package  
Ordering Code  
Marking  
IPP60R125CP  
PG-TO220  
SP000088488  
6R125P  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
25  
16  
Continuous drain current  
A
Pulsed drain current2)  
82  
I D,pulse  
E AS  
I D=11 A, V DD=50 V  
I D=11 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
708  
1.2  
mJ  
2),3)  
2),3)  
E AR  
I AR  
11  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...480 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
208  
-55 ... 150  
60  
static  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.2  
2007-08-28  

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