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IPP60R199CPXKSA1 PDF预览

IPP60R199CPXKSA1

更新时间: 2024-11-26 19:53:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 382K
描述
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP60R199CPXKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.44雪崩能效等级(Eas):436 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):16 A最大漏源导通电阻:0.199 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):51 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP60R199CPXKSA1 数据手册

 浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第2页浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第3页浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第4页浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第5页浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第6页浏览型号IPP60R199CPXKSA1的Datasheet PDF文件第7页 
IPP60R199CP  
CoolMOS® Power Transistor  
Features  
Product Summary  
V DS @ Tj,max  
R DS(on),max  
650  
0.199  
32  
V
• Lowest figure-of-merit RONxQg  
• Ultra low gate charge  
Q g,typ  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO220  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is specially designed for:  
• Hard switching topologies, for Server and Telecom  
Type  
Package  
Ordering Code  
Marking  
IPP60R199CP  
PG-TO220  
SP000084278  
6R199P  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
16  
10  
Continuous drain current  
A
Pulsed drain current2)  
51  
I D,pulse  
E AS  
I D=6.6 A, V DD=50 V  
I D=6.6 A, V DD=50 V  
Avalanche energy, single pulse  
436  
mJ  
A
2),3)  
2),3)  
E AR  
I AR  
0.66  
6.6  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
V
DS=0...480 V  
50  
±20  
MOSFET dv /dt ruggedness  
dv /dt  
V/ns  
V
V GS  
Gate source voltage  
static  
±30  
AC (f >1 Hz)  
T C=25 °C  
P tot  
139  
Power dissipation  
W
T j, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.3  
2011-12-20  

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