Datasheet > IPP60R190P6

IPP60R190P6

更新时间： 2024-11-27 01:17:19

品牌	Logo	应用领域
无锡固电 - ISC		局域网开关脉冲晶体管
页数	文件大小	规格书
2页	338K
描述
N-Channel MOSFET Transistor

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IPP60R190P6 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IPP60R190P6，IIPP60R190P6

·FEATURES

·Static drain-source on-resistance:

RDS(on) ≤0.19Ω

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRIPTION

·Provide all benefits of a fast switching super junction MOS while not

sacrificing ease of use

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

20.2

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

P_D

151

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(ch-c)

Rth(ch-a)

PARAMETER

MAX

UNIT

Channel-to-case thermal resistance

℃/W

0.83

Channel-to-ambient thermal resistance

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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