Datasheet > IPDH6N03LA

IPDH6N03LA

更新时间： 2024-11-20 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	538K
描述
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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中文翻译

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数据手册

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IPDH6N03LA 数据手册

IPDH6N03LA G IPFH6N03LA G

IPSH6N03LA G IPUH6N03LA G

OptiMOS^®2 Power-Transistor

Product Summary

V _DS

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC¹⁾for target application

_DS(on),max(SMD version)

mΩ

I _D

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

Type

IPDH6N03LA G

IPFH6N03LA G

IPSH6N03LA G

IPUH6N03LA G

Package

Marking

PG-TO252-3-11

H6N03LA

PG-TO252-3-23

H6N03LA

PG-TO251-3-11

H6N03LA

PG-TO251-3-1

H6N03LA

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

350

150

E _AS

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.5

page 1

2008-04-14

12 3 4 5 6 7...12

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