Datasheet > IPDQ60R020CFD7

IPDQ60R020CFD7

更新时间： 2024-09-14 15:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1283K
描述
The?600 V CoolMOS? CFD7?is Infineon’s latest high voltage superjunction MOSFET technology with int

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中文翻译

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IPDQ60R020CFD7 数据手册

IPDQ60R020CFD7

MOSFET

PG-HDSOP-22

600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe

successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform

tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge

(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Q_g),ꢀbest-in-class

reverseꢀrecoveryꢀchargeꢀ(Q_rr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™

CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s

fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof

aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation

robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in

process.

TAB

Drain

Pin 12-22, Tab

Features

Gate

Pin 1

•ꢀUltra-fastꢀbodyꢀdiode

•ꢀLowꢀgateꢀcharge

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdi_F/dtꢀruggedness

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Driver

Source

Pin 2

Power

Source

Pin 3-11

*1: Internal body diode

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies

•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

Potentialꢀapplications

SuitableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET

devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe

onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

Unit

650

mΩ

Q_g,typ

186

I_D,pulse

360

E_oss@ 400V

Body diode di_F/dt

21.5

1300

µJ

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPDQ60R020CFD7

PG-HDSOP-22

60R020F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-21

12 3 4 5 6 7...14

中文翻译

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与IPDQ60R020CFD7相关器件

型号	品牌	获取价格	描述	数据表
IPDQ60R022S7	INFINEON	获取价格	在采用紧凑型 SMD 封装的高压超结 MOSFET 中，600V CoolMOS™ S7
IPDQ60R022S7A	INFINEON	获取价格	The automotive qualified AEC-Q101, 600 V CoolMOS? S7A SJ MOSFET?family is optimized to off
IPDQ60R025CFD7	INFINEON	获取价格	The?600 V CoolMOS? CFD7?is Infineon’s latest
IPDQ60R035CFD7	INFINEON	获取价格	The?600 V CoolMOS? CFD7?is Infineon’s latest
IPDQ60R037CM8	INFINEON	获取价格	The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET fam
IPDQ60R040S7	INFINEON	获取价格	在采用紧凑型 SMD 封装的高压超结 MOSFET 中，600V CoolMOS™ S7
IPDQ60R040S7A	INFINEON	获取价格	The automotive qualified AEC-Q101, 600 V Cool
IPDQ60R045CFD7	INFINEON	获取价格	The?600 V CoolMOS? CFD7?is Infineon’s latest
IPDQ60R055CFD7	INFINEON	获取价格	The?600 V CoolMOS? CFD7?is Infineon’s latest
IPDQ60R065S7	INFINEON	获取价格	在采用紧凑型 SMD 封装的高压超结 MOSFET 中，600V CoolMOS? S7

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