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IPDQ65R017CFD7A PDF预览

IPDQ65R017CFD7A

更新时间: 2024-11-19 17:02:03
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
14页 1399K
描述
采用 QDPAK 顶部冷却 SMD 封装的 17mΩ IPDQ65R017CFD7A 属于通过汽车认证的?650 V CoolMOS? SJ 功率 MOSFET CFD7A 产品系列。与上一代产品

IPDQ65R017CFD7A 数据手册

 浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第2页浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第3页浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第4页浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第5页浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第6页浏览型号IPDQ65R017CFD7A的Datasheet PDF文件第7页 
IPDQ65R017CFD7A  
MOSFET  
PG-HDSOP-22  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading  
automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe  
well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe  
automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan  
integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant  
switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.  
22  
12  
TAB  
1
11  
Features  
•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody  
diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQrr  
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages  
Drain  
Pin 12-22, Tab  
*1  
Gate  
Pin 1  
Benefits  
Driver  
Source  
Pin 2  
•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies  
•ꢀHighꢀqualityꢀandꢀreliability  
Power  
Source  
Pin 3-11  
•ꢀAdvancedꢀcontrollabilityꢀdueꢀtoꢀkelvinꢀsource  
•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions  
*1: Internal body diode  
Potentialꢀapplications  
SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:  
•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,  
•ꢀOn-BoardꢀbatteryꢀChargers  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀAECꢀQ101  
Pleaseꢀnote:ꢀForꢀproductionꢀpartꢀapprovalꢀprocessꢀ(PPAP)ꢀreleaseꢀwe  
proposeꢀtoꢀshareꢀapplicationꢀrelatedꢀinformationꢀduringꢀanꢀearlyꢀdesign  
phaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.ꢀPleaseꢀcontactꢀInfineonꢀsales  
office.ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.ꢀTheir  
exchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFETꢀdevices  
theꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbeꢀonꢀthe  
DriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
650  
V
RDS(on),max  
Qg,typ  
17  
m  
nC  
A
236  
ID,pulse  
524  
Eoss @ 400V  
Body diode diF/dt  
35.3  
1300  
µJ  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPDQ65R017CFD7A  
PG-HDSOP-22  
65A017F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-12-14  

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