型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPD60R600C6ATMA1 | INFINEON |
类似代替 |
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
IPD60R950C6ATMA1 | INFINEON |
类似代替 |
Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Me |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD60R750E6AT | INFINEON |
获取价格 |
暂无描述 | |
IPD60R750E6BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-Oxide S | |
IPD60R800CE | INFINEON |
获取价格 |
||
IPD60R800CEAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IPD60R950C6 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
IPD60R950C6AT | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPD60R950C6ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Me | |
IPD60R950C6BT | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPD640N06LG | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPD640N06LG_08 | INFINEON |
获取价格 |
OptiMOS® Power-Transistor Features For fast s |