型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD64CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPD650P06NM | INFINEON |
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OptiMOS™ P-channel MOSFETs 60V in DPAK packag | |
IPD650P06NMATMA1 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Met | |
IPD65R190C7 | INFINEON |
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Power Field-Effect Transistor | |
IPD65R1K0CEAUMA1 | INFINEON |
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Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi | |
IPD65R1K4C6 | INFINEON |
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CoolMOS? C6 结合了英飞凌作为业内先进的超结MOSFET供应商的相关经验与其先进 | |
IPD65R225C7 | INFINEON |
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650V CoolMOS⢠C7 Power Transistor | |
IPD65R225C7ATMA1 | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Me | |
IPD65R250C6 | INFINEON |
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Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPD65R250E6 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |