Datasheet > IPD60R950C6AT

IPD60R950C6AT

更新时间： 2024-02-28 23:39:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
18页	1748K
描述
Power Field-Effect Transistor,

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IPD60R950C6AT 技术参数

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS C6

600V CoolMOS™ C6 Power Transistor

IPx60R950C6

Data Sheet

Rev. 2.1, 2010-03-11

Rev. 2.2, 2013-07-31

Final

Industrial & Multimarket

12 3 4 5 6 7...18

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