Datasheet > IPD65R420CFDA

IPD65R420CFDA

更新时间： 2023-09-03 20:39:36

品牌	Logo	应用领域
英飞凌 - INFINEON		高压二极管
页数	文件大小	规格书
13页	1336K
描述
650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPD65R420CFDA 数据手册

IPD65R420CFDA

MOSFET

DPAK

650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀ650VꢀCoolMOS™ꢀCFDAꢀseries

combinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhigh

classꢀinnovation.ꢀTheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfast

switchingꢀSJꢀMOSFETꢀwhileꢀofferingꢀanꢀextremelyꢀfastꢀandꢀrobustꢀbody

diode.ꢀThisꢀcombinationꢀofꢀextremelyꢀlowꢀswitching,ꢀcommutationꢀand

conductionꢀlossesꢀtogetherꢀwithꢀhighestꢀrobustnessꢀmakeꢀespecially

resonantꢀswitchingꢀapplicationsꢀmoreꢀreliable,ꢀmoreꢀefficient,ꢀlighter,ꢀand

cooler.

tab

Features

•ꢀUltra-fastꢀbodyꢀdiode

Drain

Pin 2

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀEasyꢀtoꢀuse/drive

Gate

Pin 1

•ꢀQualifiedꢀaccordingꢀtoꢀAECꢀQ101

•ꢀGreenꢀpackageꢀ(RoHSꢀcompliant),ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀforꢀmold

compound

Source

Pin 3

Applications

650VꢀCoolMOS™ꢀCFDAꢀisꢀdesignedꢀforꢀswitchingꢀapplications.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

650

0.42

Unit

V_DS

RDS(on),max

Qg,typ

Ω

ID,pulse

Eoss @ 400V

Body diode di/dt

Qrr

2.8

µJ

A/µs

µC

500

0.7

trr

140

8.8

Irrm

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD65R420CFDA

PG-TO 252

65F420A

Final Data Sheet

Rev.ꢀ2.3,ꢀꢀ2016-06-10

12 3 4 5 6 7...13

中文翻译

下载PDF

与IPD65R420CFDA相关器件

型号	品牌	获取价格	描述	数据表
IPD65R600C6	INFINEON	获取价格	650V CoolMOS C6 Power Transistor
IPD65R600C6BTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IPD65R600E6	INFINEON	获取价格	650V CoolMOS E6 Power Transistor
IPD65R600E6AT	INFINEON	获取价格	Power Field-Effect Transistor
IPD65R600E6ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IPD65R600E6BT	INFINEON	获取价格	Power Field-Effect Transistor
IPD65R600E6BTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IPD65R650CE	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPD65R650CE_15	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPD65R660CFD	INFINEON	获取价格	650V CoolMOS CFD Power Transistor