Datasheet > IPC055N03L3

IPC055N03L3

更新时间： 2023-12-06 20:02:44

品牌	Logo	应用领域
英飞凌 - INFINEON		电池电脑
页数	文件大小	规格书
4页	1772K
描述
英飞凌凭借全新的 OptiMOS? 30V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS? 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，从而延长电池寿命

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IPC055N03L3 数据手册

OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip

IPC055N03L3

PowerꢀMOSꢀTransistorꢀChip

1ꢀꢀꢀꢀꢀDescription

•ꢀN-channelꢀenhancementꢀmode

•ꢀForꢀdynamicꢀcharacterizationꢀreferꢀtoꢀtheꢀdatasheetꢀofꢀIPD031N03LG

•ꢀAQLꢀ0.65ꢀforꢀvisualꢀinspectionꢀaccordingꢀtoꢀfailureꢀcatalogue

•ꢀElectrostaticꢀDischargeꢀSensitiveꢀDeviceꢀaccordingꢀtoꢀMIL-STDꢀ883C

•ꢀDieꢀbond:ꢀsolderedꢀorꢀglued

•ꢀBacksideꢀmetallization:ꢀNiVꢀsystem

•ꢀFrontsideꢀmetallization:ꢀAlCuꢀsystem

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

V_(BR)DSS

Drain

R_DS(on)

3.1¹⁾

mΩ

mm²

µm

Die size

Thickness

3.28 x 1.68

175

Gate

Source

Typeꢀ/ꢀOrderingꢀCode

Package

Chip

Marking

RelatedꢀLinks

IPC055N03L3

not defined

2ꢀꢀꢀꢀꢀElectricalꢀCharacteristicsꢀonꢀWaferꢀLevel

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀ

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

I_DSS

V_GS=0ꢀVꢀ,I_D=1ꢀmA

V_DS=V_GS,ꢀI_D=250ꢀµA

V_GS=0ꢀVꢀ,V_DS=30ꢀV

V_GS=20ꢀVꢀ,V_DS=0ꢀV

2.2

Zero gate voltage drain current

Gate-source leakage current

µA

I_GSS

100

2.7²⁾

1.7²⁾

50³⁾

V_GS=4.5ꢀVꢀ,I_D=2.0ꢀA

V_GS=10ꢀVꢀ,I_D=2.0ꢀA

Drain-source on- resistance

R_DS(on)

mΩ

Reverse diode forward on-voltage

Avalanche energy, single pulse

V_SD

E_AS

0.82

1.1

V_GS=0ꢀVꢀ,I_F=1A

I_D=50 A, R_GS=25 Ω

¹⁾packaged in a DPAK using Al bond wire (see ref. product)

²⁾ꢀtypicalꢀbareꢀdieꢀR_DS(on);ꢀV_GS=10ꢀVꢀwhenꢀusedꢀwithꢀ4x500µmꢀAl-wedgeꢀdouble-stitchꢀbonding

³⁾limited by wafer test-equipment

Final Data Sheet

Rev.ꢀ2.5,ꢀꢀ2014-07-25

123 4

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