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IPC100N04S5-2R8 PDF预览

IPC100N04S5-2R8

更新时间: 2024-11-06 11:13:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 396K
描述
车规级MOSFET

IPC100N04S5-2R8 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:AEC-Q101处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IPC100N04S5-2R8 数据手册

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IPC100N04S5-2R8  
OptiMOS-5 Power-Transistor  
Product Summary  
VDS  
40  
2.8  
100  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8-33  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Normal Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IPC100N04S5-2R8  
PG-TDSON-8-33 5N042R8  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
100  
A
T C=100°C, VGS=10V2)  
85  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
400  
66  
Avalanche energy, single pulse2)  
Avalanche current, single pulse4)  
Gate source voltage  
I D=50A  
mJ  
A
I AS  
-
100  
VGS  
-
±20  
V
Ptot  
T C=25°C  
Power dissipation  
75  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2016-12-06  

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