是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 雪崩能效等级(Eas): | 130 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPC100N04S5L1R9ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, M | |
IPC100N04S5L-2R6 | INFINEON |
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车规级MOSFET | |
IPC100N04S5L2R6ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, M | |
IPC120 | AXIOMTEK |
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1 PCI slot | |
IPC-120 | ADVANTECH |
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Cost Effective Compact 1U Rackmount Chassis for Half-size SBC | |
IPC-120_15 | ADVANTECH |
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Cost Effective Compact 1U Rackmount Chassis for Half-size SBC | |
IPC-120BP-00XE | ADVANTECH |
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Cost Effective Compact 1U Rackmount Chassis for Half-size SBC | |
IPC121 | AXIOMTEK |
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1 PCI or 1 PCIe slot | |
IPC16/2-G-10,16BK | PHOENIX |
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Barrier Strip Terminal Block, | |
IPC16/2-GF-10,16GY | PHOENIX |
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Barrier Strip Terminal Block, |