Datasheet > IPC100N04S5-1R9

IPC100N04S5-1R9

更新时间： 2024-11-06 11:15:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	423K
描述
车规级MOSFET

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中文翻译

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技术参数
数据手册

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IPC100N04S5-1R9 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.46
Base Number Matches：	1

IPC100N04S5-1R9 数据手册

IPC100N04S5-1R9

OptiMOS^™-5 Power-Transistor

Product Summary

V_DS

1.9

100

R_DS(on),max

I_D

Features

PG-TDSON-8-34

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPC100N04S5-1R9

PG-TDSON-8-34 5N041R9

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

100

T _C=100°C, V_GS=10V²⁾

100

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

400

130

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=50A

I _AS

100

V_GS

±20

P_tot

T _C=25°C

Power dissipation

100

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.2

page 1

2016-12-06

12 3 4 5 6 7...9

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