5秒后页面跳转
IPC100N04S4-02_15 PDF预览

IPC100N04S4-02_15

更新时间: 2024-09-21 01:18:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 242K
描述
N-channel - Enhancement mode

IPC100N04S4-02_15 数据手册

 浏览型号IPC100N04S4-02_15的Datasheet PDF文件第2页浏览型号IPC100N04S4-02_15的Datasheet PDF文件第3页浏览型号IPC100N04S4-02_15的Datasheet PDF文件第4页浏览型号IPC100N04S4-02_15的Datasheet PDF文件第5页浏览型号IPC100N04S4-02_15的Datasheet PDF文件第6页浏览型号IPC100N04S4-02_15的Datasheet PDF文件第7页 
IPC100N04S4-02  
OptiMOSTM-T2 Power-Transistor  
Product Summary  
VDS  
RDS(on)  
ID  
40  
2.4  
100  
V
m  
A
Features  
• N-channel - Enhancement mode  
PG-TDSON-8-23  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
1
1
• Feasible for automatic optical inspection (AOI)  
Type  
Package  
Marking  
4N0402  
IPC100N04S4-02  
PG-TDSON-8-23  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C,  
T J =175°C,  
GS=10V  
1001)  
I D  
Continuous drain current  
A
V
T C=100 °C,  
T J =175°C,  
891, 2)  
V
GS=10 V  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25 °C  
400  
315  
I D=50 A  
Avalanche energy, single pulse4)  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
-
100  
VGS  
-
+/-20  
V
T C=25 °C,  
T J =175°C  
Ptot  
Power dissipation  
150  
W
-55 ... +1753)  
T j, T stg  
Operating and storage temperature  
-
°C  
Rev. 1.0  
page 1  
2015-05-22  

与IPC100N04S4-02_15相关器件

型号 品牌 获取价格 描述 数据表
IPC100N04S5-1R2 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, M
IPC100N04S51R2ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, M
IPC100N04S5-1R7 INFINEON

获取价格

车规级MOSFET
IPC100N04S5-1R9 INFINEON

获取价格

车规级MOSFET
IPC100N04S5-2R8 INFINEON

获取价格

车规级MOSFET
IPC100N04S5L-1R1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, M
IPC100N04S5L1R1ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, M
IPC100N04S5L-1R5 INFINEON

获取价格

Power Field-Effect Transistor,
IPC100N04S5L1R5ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, M
IPC100N04S5L-1R9 INFINEON

获取价格

车规级MOSFET