5秒后页面跳转
IMB5A PDF预览

IMB5A

更新时间: 2024-02-25 09:35:36
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
1页 63K
描述
General purpose (dual digital transistors)

IMB5A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.54Is Samacsys:N
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PDSO-G6
JESD-609代码:e1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IMB5A 数据手册

  
UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A  
Transistors  
General purpose (dual digital transistors)  
UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A  
!External dimensions (Units : mm)  
!Features  
1) Two DTA124E chips in a UMT or SMT package.  
UMA1N  
1.25  
2.1  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Supply voltage  
Input voltage  
VCC  
50  
40  
10  
0.1Min.  
V
IN  
V
ROHM : UMT5  
EIAJ : SC-88A  
Each lead has same dimensions  
Output current  
Power dissipation  
I
O
100  
mA  
mW  
UMA1N, UMB1N, UMB5N  
FMA1A, IMB1A, IMB5A  
150(TOTAL)  
300(TOTAL)  
150  
1
2
Pd  
UMB1N, UMB5N  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 ∼ +150  
1
2
120mW per element must not be exceeded.  
200mW per element must not be exceeded.  
1.25  
2.1  
!Package, marking, and packaging specifications  
0.1Min.  
ROHM : UMT6  
EIAJ : SC-88  
Part No.  
UMA1N UMB1N UMB5N FMA1A IMB1A  
IMB5A  
SMT6  
B5  
Each lead has same dimensions  
Package  
Marking  
UMT5  
A1  
UMT6  
B1  
UMT6  
B5  
SMT5  
A1  
SMT6  
B1  
Code  
TR  
TN  
TR  
T148  
T110  
T110  
FMA1A  
Basic ordering unit  
(pieces)  
3000  
3000  
3000  
3000  
3000  
3000  
1.6  
2.8  
!Circuit schematic  
UMA1N  
UMB1N  
UMB5N  
0.3to0.6  
ROHM : SMT5  
EIAJ : SC-74A  
R1  
R2  
R2  
R1  
R1  
Each lead has same dimensions  
R1  
R2  
R2  
R
2
R
1
R2  
R1  
IMB1A, IMB5A  
FMA1A  
IMB5A  
IMB1A  
R1  
R2  
R1  
R2  
R2  
R1  
R1  
R2  
R2  
1.6  
2.8  
R1  
R2  
R1  
0.3to0.6  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
CC = −5V , I = −100µA  
= −0.2V , I = −5mA  
= −0.5mA/ 10mA  
= −5V  
CC = −50V , V  
V
V
I(off)  
I(on)  
0.5  
V
V
O
Input voltage  
V
O
O
3
Output voltage  
Input current  
V
O(on)  
0.3  
V
mA  
µA  
kΩ  
I
O
/I  
C
0.1  
I
I
V
V
V
I
0.36  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=
0V  
28.6  
0.5  
G
I
56  
22  
O
= −5V , IO = −5mA  
R
1
15.4  
0.8  
R2/R1  
1
1.2  

与IMB5A相关器件

型号 品牌 获取价格 描述 数据表
IMB5AT108 ROHM

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
IMB5AT109 ROHM

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
IMB5AT110 ROHM

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT6,
IMB6 ETC

获取价格

TRANSISTOR | SO
IMB6A ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SO
IMB6AT108 ROHM

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
IMB7 ETC

获取价格

TRANSISTOR | SO
IMB7A ROHM

获取价格

General purpose (dual digital transistors)
IMB7AT108 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
IMB7AT110 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74,