是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.76 |
其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e2 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IMB5AT109 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, |
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IMB5AT110 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT6, |
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IMB6 | ETC |
获取价格 |
TRANSISTOR | SO |
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IMB6A | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SO |
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IMB6AT108 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon |
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IMB7 | ETC |
获取价格 |
TRANSISTOR | SO |
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IMB7A | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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IMB7AT108 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, |
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IMB7AT110 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, |
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IMB8 | ETC |
获取价格 |
TRANSISTOR | SO |
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