IL215AT/216AT/217AT
Phototransistor
Small Outline Surface Mount
Optocoupler
FEATURES
• High Current Transfer Ratio, I =1.0 mA
Dimensions in inches (mm)
F
IL215AT—20% Minimum
IL216AT—50% Minimum
IL217AT—100% Minimum
.120 .005
(3.05 .13)
.240
Anode
.154 .005 Cathode
8
7
6
5
1
2
3
4
NC
Base
Collector
Emitter
C
• Isolation Voltage, 3000 V
L
RMS
(3.91 .13)
.016 (.41)
.015 .002
NC
NC
(6.10)
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Pin One ID
7°
.058 .005
(1.49 .13)
40°
.192 .005
(4.88 .13)
(.38 .05)
.004 (.10)
.008 (.20)
.125 .005
(3.18 .13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
.021 (.53)
Coplanarity
.0015 (.04)
max.
.020 .004
(.51 .10)
2 plcs.
• Underwriters Lab File #E52744
(Code LetterY)
VE
•
VDE 0884 Available with Option 1
D
DESCRIPTION
Characteristics T =25°C
A
The IL215AT/216AT/217AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Parameter
Symbol
Min. Typ. Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
—
—
—
1.0
0.1
13
1.5
100
—
V
IF=1.0mA
VR=6.0 V
VR=0
µA
pF
CO
Breakdown Voltage
B
30
7.0
—
—
—
—
50
V
IC=10 µA
VCEO
B
—
V
I =10 µA
VECO
E
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Dark Current,
Collector-Emitter
ICEOdark
5.0
nA
VCE=10 V
IF=0
Capacitance,
CCE
—
10
—
pF
%
VCE=0
Maximum Ratings
Emitter
Collector-Emitter
Peak Reverse Voltage.................................. 6.0 V
Continuous Forward Current ..................... 60 mA
Power Dissipation at 25°C........................ 90 mW
Derate Linearly from 25°C .................. 1.2mW/°C
Detector
Collector-Emitter Breakdown Voltage........... 30 V
Emitter-Collector Breakdown Voltage.......... 7.0 V
Collector-Base Breakdown Voltage.............. 70 V
Package
DC Current IL215AT CTR
Transfer
Ratio
20
50
50
80
—
—
—
0.4
IF=1.0 mA,
VCE=5.0 V
DC
IL216AT
IL217AT
100
—
130
—
Saturation Voltage,
Collector-Emitter
VCEsat
—
IF=1.0 mA,
IC=0.1 mA
I
I
..................................................... 50 mA
(t<1.0 ms)...................................... 100 mA
CMAX DC
Isolation Test Voltage
V
3000
—
—
—
—
V
1 sec.
—
IO
RMS
CMAX
Capacitance,
Input to Output
C
0.5
pF
GΩ
µs
Power Dissipation .................................. 150 mW
Derate Linearly from 25°C .................. 2.0mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector)................................. 240 mW
Derate Linearly from 25°C .................. 3.2mW/°C
Storage Temperature. .............. –55°C to +150°C
Operating Temperature ........... –55°C to +100°C
Soldering Time at 260°C ..........................10 sec.
IO
Resistance,
Input to Output
R
—
—
100
3.0
—
—
—
IO
Switching Time
ton, toff
IC=2.0 mA,
R =100 Ω,
VLCC=10 V
Document Number: 83616
Revision 17-August-01
www.vishay.com
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