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IL217AT-X001 PDF预览

IL217AT-X001

更新时间: 2024-09-21 15:34:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 397K
描述
Transistor Output Optocoupler, 1-Element, 3000V Isolation, SOIC-8

IL217AT-X001 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOIC-8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.40.80.00
风险等级:5.5Coll-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE标称电流传输比:130%
最大暗电源:50 nA最大正向电流:0.06 A
最大绝缘电压:3000 V元件数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLERBase Number Matches:1

IL217AT-X001 数据手册

 浏览型号IL217AT-X001的Datasheet PDF文件第2页浏览型号IL217AT-X001的Datasheet PDF文件第3页 
IL215AT/216AT/217AT  
Phototransistor  
Small Outline Surface Mount  
Optocoupler  
FEATURES  
• High Current Transfer Ratio, I =1.0 mA  
Dimensions in inches (mm)  
F
IL215AT—20% Minimum  
IL216AT—50% Minimum  
IL217AT—100% Minimum  
.120 .005  
(3.05 .13)  
.240  
Anode  
.154 .005 Cathode  
8
7
6
5
1
2
3
4
NC  
Base  
Collector  
Emitter  
C
• Isolation Voltage, 3000 V  
L
RMS  
(3.91 .13)  
.016 (.41)  
.015 .002  
NC  
NC  
(6.10)  
• Electrical Specifications Similar to  
Standard 6 Pin Coupler  
• Industry Standard SOIC-8 Surface  
Mountable Package  
• Standard Lead Spacing, .05"  
• Available only on Tape and Reel Option  
(Conforms to EIA Standard RS481A)  
• Compatible with Dual Wave, Vapor Phase  
and IR Reflow Soldering  
Pin One ID  
7°  
.058 .005  
(1.49 .13)  
40°  
.192 .005  
(4.88 .13)  
(.38 .05)  
.004 (.10)  
.008 (.20)  
.125 .005  
(3.18 .13)  
.008 (.20)  
5° max.  
Lead  
R.010  
(.25) max.  
.050 (1.27)  
typ.  
.021 (.53)  
Coplanarity  
.0015 (.04)  
max.  
.020 .004  
(.51 .10)  
2 plcs.  
• Underwriters Lab File #E52744  
(Code LetterY)  
VE  
VDE 0884 Available with Option 1  
D
DESCRIPTION  
Characteristics T =25°C  
A
The IL215AT/216AT/217AT are optically coupled  
pairs with a Gallium Arsenide infrared LED and a  
silicon NPN phototransistor. Signal information,  
including a DC level, can be transmitted by the  
device while maintaining a high degree of electrical  
isolation between input and output. The IL215AT/  
216AT/217AT comes in a standard SOIC-8 small  
outline package for surface mounting which makes  
it ideally suited for high density applications with  
limited space. In addition to eliminating through-  
holes requirements, this package conforms to stan-  
dards for surface mounted devices.  
Parameter  
Symbol  
Min. Typ. Max. Unit  
Condition  
Emitter  
Forward Voltage  
Reverse Current  
Capacitance  
Detector  
VF  
IR  
1.0  
0.1  
13  
1.5  
100  
V
IF=1.0mA  
VR=6.0 V  
VR=0  
µA  
pF  
CO  
Breakdown Voltage  
B
30  
7.0  
50  
V
IC=10 µA  
VCEO  
B
V
I =10 µA  
VECO  
E
The high CTR at low input current is designed for  
low power consumption requirements such as  
CMOS microprocessor interfaces.  
Dark Current,  
Collector-Emitter  
ICEOdark  
5.0  
nA  
VCE=10 V  
IF=0  
Capacitance,  
CCE  
10  
pF  
%
VCE=0  
Maximum Ratings  
Emitter  
Collector-Emitter  
Peak Reverse Voltage.................................. 6.0 V  
Continuous Forward Current ..................... 60 mA  
Power Dissipation at 25°C........................ 90 mW  
Derate Linearly from 25°C .................. 1.2mW/°C  
Detector  
Collector-Emitter Breakdown Voltage........... 30 V  
Emitter-Collector Breakdown Voltage.......... 7.0 V  
Collector-Base Breakdown Voltage.............. 70 V  
Package  
DC Current IL215AT CTR  
Transfer  
Ratio  
20  
50  
50  
80  
0.4  
IF=1.0 mA,  
VCE=5.0 V  
DC  
IL216AT  
IL217AT  
100  
130  
Saturation Voltage,  
Collector-Emitter  
VCEsat  
IF=1.0 mA,  
IC=0.1 mA  
I
I
..................................................... 50 mA  
(t<1.0 ms)...................................... 100 mA  
CMAX DC  
Isolation Test Voltage  
V
3000  
V
1 sec.  
IO  
RMS  
CMAX  
Capacitance,  
Input to Output  
C
0.5  
pF  
GΩ  
µs  
Power Dissipation .................................. 150 mW  
Derate Linearly from 25°C .................. 2.0mW/°C  
Package  
Total Package Dissipation at 25°C Ambient  
(LED + Detector)................................. 240 mW  
Derate Linearly from 25°C .................. 3.2mW/°C  
Storage Temperature. .............. –55°C to +150°C  
Operating Temperature ........... –55°C to +100°C  
Soldering Time at 260°C ..........................10 sec.  
IO  
Resistance,  
Input to Output  
R
100  
3.0  
IO  
Switching Time  
ton, toff  
IC=2.0 mA,  
R =100 ,  
VLCC=10 V  
Document Number: 83616  
Revision 17-August-01  
www.vishay.com  
2–114  

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