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IL221A

更新时间: 2024-02-26 14:17:35
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
3页 57K
描述
PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL221A 数据手册

 浏览型号IL221A的Datasheet PDF文件第2页浏览型号IL221A的Datasheet PDF文件第3页 
IL221A/IL222A/IL223A  
PHOTODARLINGTON  
SMALL OUTLINE  
SURFACE MOUNT OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• High Current Transfer Ratio, I =1 mA,  
F
IL221A, 100% Minimum  
IL222A, 200% Minimum  
IL223A, 500% Minimum  
• Withstand Test Voltage, 2500 VAC  
• Electrical Specifications Similar to  
Standard 6 Pin Coupler  
Anode 1  
Cathode 2  
NC 3  
8
7
6
5
NC  
.120±.005  
(3.05±.13)  
.240  
Base  
.154±.005  
(3.91±.13)  
C
L
Collector  
Emitter  
RMS  
(6.10)  
NC 4  
.016 (.41)  
Pin One ID  
7°  
• Industry Standard SOIC-8 Surface  
Mountable Package  
40°  
.058±.005  
(1.49±.13)  
.015±.002  
(.38±.05)  
.192±.005  
(4.88±.13)  
• Standard Lead Spacing, .05"  
• Available in Tape and Reel Option  
(Conforms to EIA Standard RS481A)  
• Compatible with Dual Wave, Vapor Phase  
and IR Reflow Soldering  
.004 (.10)  
.008 (.20)  
.125±.005  
(3.18±.13)  
.008 (.20)  
5° max.  
R.010  
(.25) max.  
Lead  
.050 (1.27)  
.020±.004  
(.15±.10)  
2 plcs.  
Coplanarity  
±.0015 (.04)  
max.  
typ.  
• Underwriters Lab File #E52744  
(Code Letter P)  
.040 (1.02)  
DESCRIPTION  
The IL221A/IL222A/IL223A is a high current trans-  
fer ratio (CTR) optocoupler with a Gallium Arsenide  
infrared LED emitter and a silicon NPN photodar-  
lington transistor detector.  
Characteristics (T =25°C)  
A
Symbol  
Min.  
Typ.  
Max. Unit  
Condition  
Emitter  
This device has a CTR tested at an 1 mA LED cur-  
rent. This low drive current permits easy interfacing  
from CMOS to LSTTL or TTL.  
Forward Voltage  
Reverse Current  
Capacitance  
V
1.0  
0.1  
25  
1.5  
V
I =1 mA  
F
F
I
100  
µA  
pF  
V =6.0 V  
R
R
This optocoupler is constructed in a standard  
SOIC-8 foot print which makes it ideally suited for  
high density applications. In addition to eliminating  
through-holes requirements, this package con-  
forms to standards for surface mounted devices.  
C
V =0 V,  
O
R
F=1 MHz  
Detector  
Breakdown Voltage  
Collector-Emitter  
Emitter-Collector  
B
B
30  
5
V
V
I =100 µA  
Maximum Ratings  
VCEO  
VECO  
C
I =100 µA  
E
Emitter  
Voltage,  
Collector-Base  
BV  
70  
I =10 µA  
Peak Reverse Voltage .....................................6.0 V  
Continuous Forward Current .........................60 mA  
Power Dissipation at 25°C............................90 mW  
Derate Linearly from 25°C ......................1.2 mW/°C  
CBO  
C
Capacitance,  
Collector-Emitter  
C
3.4  
pF  
V =10 V  
CE  
CE  
Detector  
Package  
Collector-Emitter Breakdown Voltage ...............30 V  
Emitter-Collector Breakdown Voltage .................5 V  
Collector-Base Breakdown Voltage ..................70 V  
Power Dissipation ......................................150 mW  
Derate Linearly from 25°C ......................2.0 mW/°C  
DC Current Transfer CTR  
Ratio  
IL221A  
IL222A  
IL223A  
I =1 mA,  
F
DC  
V
=5 V  
CE  
100  
200  
300  
Package  
Saturation Voltage,  
Collector-Emitter  
V
1
V
I
=0.5 mA,  
CEsat  
CE  
Total Package Dissipation at 25°C Ambient  
(LED + Detector) ....................................240 mW  
Derate Linearly from 25°C ......................3.3 mW/°C  
Storage Temperature ...................–55°C to +150°C  
Operating Temperature ...............–55°C to +100°C  
Soldering Time at 260°C ............................. 10 sec.  
I =1 mA  
F
Isolation Test  
Voltage  
V
2500  
VAC  
t=1 sec.  
IO  
RMS  
Capacitance,  
Input toOutput  
C
R
0.5  
pF  
IO  
Resistance,  
Input to Output  
100  
GΩ  
IO  
5–1  
This document was created with FrameMaker 4.0.4  

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