IL221A/IL222A/IL223A
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• High Current Transfer Ratio, I =1 mA,
F
IL221A, 100% Minimum
IL222A, 200% Minimum
IL223A, 500% Minimum
• Withstand Test Voltage, 2500 VAC
• Electrical Specifications Similar to
Standard 6 Pin Coupler
Anode 1
Cathode 2
NC 3
8
7
6
5
NC
.120±.005
(3.05±.13)
.240
Base
.154±.005
(3.91±.13)
C
L
Collector
Emitter
RMS
(6.10)
NC 4
.016 (.41)
Pin One ID
7°
• Industry Standard SOIC-8 Surface
Mountable Package
40°
.058±.005
(1.49±.13)
.015±.002
(.38±.05)
.192±.005
(4.88±.13)
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
.004 (.10)
.008 (.20)
.125±.005
(3.18±.13)
.008 (.20)
5° max.
R.010
(.25) max.
Lead
.050 (1.27)
.020±.004
(.15±.10)
2 plcs.
Coplanarity
±.0015 (.04)
max.
typ.
• Underwriters Lab File #E52744
(Code Letter P)
.040 (1.02)
DESCRIPTION
The IL221A/IL222A/IL223A is a high current trans-
fer ratio (CTR) optocoupler with a Gallium Arsenide
infrared LED emitter and a silicon NPN photodar-
lington transistor detector.
Characteristics (T =25°C)
A
Symbol
Min.
Typ.
Max. Unit
Condition
Emitter
This device has a CTR tested at an 1 mA LED cur-
rent. This low drive current permits easy interfacing
from CMOS to LSTTL or TTL.
Forward Voltage
Reverse Current
Capacitance
V
1.0
0.1
25
1.5
V
I =1 mA
F
F
I
100
µA
pF
V =6.0 V
R
R
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
C
V =0 V,
O
R
F=1 MHz
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
B
B
30
5
V
V
I =100 µA
Maximum Ratings
VCEO
VECO
C
I =100 µA
E
Emitter
Voltage,
Collector-Base
BV
70
I =10 µA
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
CBO
C
Capacitance,
Collector-Emitter
C
3.4
pF
V =10 V
CE
CE
Detector
Package
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................5 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
DC Current Transfer CTR
Ratio
IL221A
IL222A
IL223A
I =1 mA,
F
DC
V
=5 V
CE
100
200
300
Package
Saturation Voltage,
Collector-Emitter
V
1
V
I
=0.5 mA,
CEsat
CE
Total Package Dissipation at 25°C Ambient
(LED + Detector) ....................................240 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
I =1 mA
F
Isolation Test
Voltage
V
2500
VAC
t=1 sec.
IO
RMS
Capacitance,
Input toOutput
C
R
0.5
pF
IO
Resistance,
Input to Output
100
GΩ
IO
5–1
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