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IDT71V428S12YYYG PDF预览

IDT71V428S12YYYG

更新时间: 2024-11-07 02:58:03
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
9页 77K
描述
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)

IDT71V428S12YYYG 数据手册

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3.3V CMOS Static RAM  
4 Meg (1M x 4-Bit)  
IDT71V428S  
IDT71V428L  
Features  
Description  
1M x 4 advanced high-speed CMOS Static RAM  
JEDEC Center Power / GND pinout for reduced noise  
Equal access and cycle times  
The IDT71V428 is a 4,194,304-bit high-speed Static RAM orga-  
nized as 1M x 4. It is fabricated using IDTs high-perfomance, high-  
reliability CMOS technology. This state-of-the-art technology, com-  
bined with innovative circuit design techniques, provides a cost-  
effective solution for high-speed memory needs.  
— Commercial and Industrial: 10/12/15ns  
Single 3.3V power supply  
One Chip Select plus one Output Enable pin  
Bidirectional data inputs and outputs directly  
LVTTL-compatible  
TheIDT71V428has anoutputenablepinwhichoperates as fastas  
5ns, withaddress access times as fastas 10ns. Allbidirectionalinputs  
andoutputs ofthe IDT71V428are LVTTL-compatible andoperationis  
from a single 3.3V supply. Fully static asynchronous circuitry is used,  
requiringnoclocks orrefreshforoperation.  
Low power consumption via chip deselect  
Available in 32-pin, 400 mil plastic SOJ package.  
The IDT71V428 is packaged in a 32-pin, 400 mil Plastic SOJ.  
Functional Block Diagram  
A0  
4,194,304-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A19  
4
4
I/O0 – I/O3  
I/O CONTROL  
4
WE  
OE  
CS  
CONTROL  
LOGIC  
3623 drw 01  
SEPTEMBER 2004  
1
©2004 IntegratedDeviceTechnology,Inc.  
DSC-3623/06  

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