是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | LCC-52 | 针数: | 52 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.73 |
最长访问时间: | 30 ns | 其他特性: | INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
JESD-30 代码: | S-CQCC-N52 | JESD-609代码: | e0 |
长度: | 19.05 mm | 内存密度: | 16384 bit |
内存集成电路类型: | MULTI-PORT SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 52 | 字数: | 2048 words |
字数代码: | 2000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | QCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 225 | 认证状态: | Not Qualified |
座面最大高度: | 2.2098 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 19.05 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71421SA30L52B | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 30ns, CMOS, CQCC52, LCC-52 | |
IDT71421SA35J | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71421SA35J8 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, | |
IDT71421SA35JI | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71421SA35L52 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, LCC-52 | |
IDT71421SA35L52B | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, LCC-52 | |
IDT71421SA35LG | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, HERMETIC SEALED, LCC-52 | |
IDT71421SA35PF | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71421SA35PF8 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 | |
IDT71421SA35PF9 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 |