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IDT71342LA25J PDF预览

IDT71342LA25J

更新时间: 2024-11-22 23:01:11
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
13页 147K
描述
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE

IDT71342LA25J 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:LCC
包装说明:PLASTIC, LCC-52针数:52
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.25
最长访问时间:25 ns其他特性:SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP
I/O 类型:COMMONJESD-30 代码:S-PQCC-J52
JESD-609代码:e0长度:19.1262 mm
内存密度:32768 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:2
端子数量:52字数:4096 words
字数代码:4000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC52,.8SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:4.57 mm最大待机电流:0.004 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.24 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:19.1262 mmBase Number Matches:1

IDT71342LA25J 数据手册

 浏览型号IDT71342LA25J的Datasheet PDF文件第2页浏览型号IDT71342LA25J的Datasheet PDF文件第3页浏览型号IDT71342LA25J的Datasheet PDF文件第4页浏览型号IDT71342LA25J的Datasheet PDF文件第5页浏览型号IDT71342LA25J的Datasheet PDF文件第6页浏览型号IDT71342LA25J的Datasheet PDF文件第7页 
IDT71342SA/LA  
HIGH-SPEED  
4K x 8 DUAL-PORT  
STATIC RAM WITH SEMAPHORE  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
• High-speed access  
TheIDT71342isanextremelyhigh-speed4Kx8Dual-Port  
Static RAM with full on-chip hardware support of semaphore  
signalling between the two ports.  
— Commercial: 20/25/35/45/55/70ns (max.)  
• Low-power operation  
— IDT71342SA  
TheIDT71342providestwoindependentportswithseparate  
control, address, and I/O pins that permit independent,  
asynchronous access for reads or writes to any location in  
memory. To assist in arbitrating between ports, a fully  
independent semaphore logic block is provided. This block  
contains unassigned flags which can be accessed by either  
side; however, only one side can control the flag at any time.  
Active: 500mW (typ.)  
Standby: 5mW (typ.)  
— IDT71342LA  
Active: 500mW (typ.)  
Standby: 1mW (typ.)  
• Fully asynchronous operation from either port  
• Full on-chip hardware support of semaphore signalling An automatic power down feature, controlled by CEand SEM,  
between ports  
permits the on-chip circuitry of each port to enter a very low  
standby power mode (both CE and SEM High).  
• Battery backup operation—2V data retention  
• TTL-compatible; single 5V (±10%) power supply  
• Available in plastic packages  
• Industrial temperature range (–40°C to +85°C) is avail-  
able, tested to military electrical specifications  
Fabricated using IDT’s CMOS high-performance  
technology, this device typically operates on only 500mW of  
power. Low-power (LA) versions offer battery backup data  
retentioncapability,witheachporttypicallyconsuming200µW  
from a 2V battery. The device is packaged in either a 64-pin  
TQFP, thin quad plastic flatpack, or a 52-pin PLCC.  
FUNCTIONAL BLOCK DIAGRAM  
R/  
WL  
R/  
WR  
CER  
CEL  
OER  
OEL  
COLUMN  
I/O  
COLUMN  
I/O  
I/O0R - I/O7R  
I/O0L- I/O7L  
MEMORY  
ARRAY  
SEMAPHORE  
LOGIC  
SEM  
R
SEM  
L
LEFT SIDE  
ADDRESS  
DECODE  
LOGIC  
RIGHT SIDE  
ADDRESS  
DECODE  
LOGIC  
A
0R- A11R  
A0L- A11L  
2721 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
COMMERCIAL TEMPERATURE RANGE  
OCTOBER 1996  
©1996 Integrated Device Technology, Inc.  
DSC-2721/4  
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.  
1
6.05  

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