是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | LQFP, | 针数: | 64 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.48 |
Is Samacsys: | N | 最长访问时间: | 25 ns |
其他特性: | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | JESD-30 代码: | S-PQFP-G64 |
JESD-609代码: | e3 | 长度: | 14 mm |
内存密度: | 32768 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 64 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LQFP | 封装形状: | SQUARE |
封装形式: | FLATPACK, LOW PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最小待机电流: | 2 V |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71342LA25PFGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 25ns, CMOS, PQFP64, PLASTIC, TQFP-64 | |
IDT71342LA25PFGI8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 25ns, CMOS, PQFP64, PLASTIC, TQFP-64 | |
IDT71342LA25PFI | IDT |
获取价格 |
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE | |
IDT71342LA25PFI8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 25ns, CMOS, PQFP64, PLASTIC, TQFP-64 | |
IDT71342LA35J | IDT |
获取价格 |
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE | |
IDT71342LA35J8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JG | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JG8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JI | IDT |
获取价格 |
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE |