是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | PLASTIC, TQFP-64 | 针数: | 64 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.48 |
Is Samacsys: | N | 最长访问时间: | 25 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQFP-G64 |
JESD-609代码: | e0 | 长度: | 14 mm |
内存密度: | 32768 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 64 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LQFP |
封装等效代码: | QFP64,.66SQ,32 | 封装形状: | SQUARE |
封装形式: | FLATPACK, LOW PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.6 mm |
最大待机电流: | 0.01 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.26 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 20 | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71342LA35J | IDT |
获取价格 |
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE | |
IDT71342LA35J8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JG | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JG8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
IDT71342LA35JI | IDT |
获取价格 |
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE | |
IDT71342LA35L52 | IDT |
获取价格 |
Multi-Port SRAM, 4KX8, 35ns, CMOS, CQCC52, LCC-52 | |
IDT71342LA35L52B | IDT |
获取价格 |
Multi-Port SRAM, 4KX8, 35ns, CMOS, CQCC52, LCC-52 | |
IDT71342LA35PF | IDT |
获取价格 |
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE | |
IDT71342LA35PF8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQFP64, PLASTIC, TQFP-64 |