Datasheet > 存储 > SRAM> IDT70V7399S200BCI

IDT70V7399S200BCI

更新时间： 2024-11-24 22:26:15

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	489K
描述
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

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中文翻译

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数据手册

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IDT70V7399S200BCI 数据手册

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HIGH-SPEED 3.3V 128K x 18

SYNCHRONOUS

BANK-SWITCHABLE

IDT70V7399S

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

◆

128K x 18 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

– 64 independent 2K x 18 banks

– 2 megabits of memory on chip

Bank access controlled via bank address pins

High-speed data access

– Data input, address, byte enable and control registers

– Self-timedwriteallowsfastcycletime

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

Available in a 144-pin Thin Quad Flatpack (TQFP),

208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball

GridArray(BGA)

Supports JTAG features compliant with IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

144-pin TQFP package.

◆

– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz) (max.)

– Industrial: 3.6 (166MHz)/4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 5ns cycle time, 200MHzoperation(14Gbps bandwidth)

– Fast 3.4ns clock to data out

◆

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

FunctionalBlockDiagram

PL/

OPT^L

CLK^L

PL/FT^R

OPT^R

CLK^R

ADS^L

CNTEN^L

REPEAT^L

R/W^L

ADS^R

CNTEN^R

REPEAT^R

R/W^R

CE^0R

CE^1R

UB^R

LB^R

MUX

CONTROL

LOGIC

CONTROL

LOGIC

CE^0L

CE^1L

UB^L

LB^L

2Kx18

MEMORY

ARRAY

OE^L

OE^R

(BANK 0)

MUX

I/O

CONTROL

I/O

CONTROL

I/O^0L-17L

I/O^0R-17R

2Kx18

MEMORY

ARRAY

A^10R

A^0R

(BANK 1)

A^10L

A^0L

ADDRESS

DECODE

ADDRESS

DECODE

MUX

BA^5R

BA^4R

BA^3R

BA^2R

BA^1R

BA^0R

BA^5L

BA^4L

BANK

DECODE

BANK

DECODE

BA^1L

BA^0L

MUX

2Kx18

MEMORY

ARRAY

(BANK 63)

NOTE:

MUX

1. The Bank-Switchable dual-port uses a true SRAM

core instead of the traditional dual-port SRAM core.

As a result, it has unique operating characteristics.

Please refer to the functional description on page 19

for details.

5630 drw 01

TMS

TCK

TRST

TDI

TDO

JTAG

DECEMBER 2002

DSC 5630/6

12 3 4 5 6 7...22

中文翻译

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与IDT70V7399S200BCI相关器件

型号	品牌	获取价格	描述	数据表
IDT70V7399S200BF	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7399S200BFI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7399S200DD	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7399S200DDI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S_09	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S133BC	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S133BC8	IDT	获取价格	Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA256, BGA-256
IDT70V7519S133BCG	IDT	获取价格	Dual-Port SRAM, 256KX36, 15ns, PBGA256, BGA-256
IDT70V7519S133BCGI8	IDT	获取价格	Dual-Port SRAM, 256KX36, 15ns, PBGA256, BGA-256

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