Datasheet > 存储 > SRAM> IDT70V639S10BCI

IDT70V639S10BCI

更新时间： 2024-10-27 22:08:27

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
23页	187K
描述
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

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中文翻译

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数据手册

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IDT70V639S10BCI 数据手册

PRELIMINARY

IDT70V639S

HIGH-SPEED 3.3V 128K x 18

ASYNCHRONOUS DUAL-PORT

STATIC RAM

Features

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

◆

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package.

◆

– Commercial:10/12/15ns (max.)

– Industrial:12/15ns (max.)

Dual chip enables allow for depth expansion without

external logic

IDT70V639 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

◆

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 128-pin Thin Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Functional Block Diagram

CE0L

CE0R

CE1L

CE1R

OEL

OER

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

128K x 18

MEMORY

ARRAY

Din_L

I/O0L- I/O17L

Din_R

I/O0R - I/O17R

16R

16L

Address

Decoder

Address

Decoder

ADDR_L

ADDR_R

OER

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

BUSY

SEM

INT

BUSY

SEM

INT

TMS

TCK

TDI

JTAG

TDO

TRST

5621 drw 01

NOTES:

1. BUSY is an input as a Slave (M/S=V^IL) and an output when it is a Master (M/S=VIH).

2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).

JUNE 2001

DSC-5621/3

12 3 4 5 6 7...23

中文翻译

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与IDT70V639S10BCI相关器件

型号	品牌	获取价格	描述	数据表
IDT70V639S10BF	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10BFG	IDT	获取价格	Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, G
IDT70V639S10BFG8	IDT	获取价格	Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, FINE PITCH, BGA-208
IDT70V639S10BFI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10PRF	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10PRF8	IDT	获取价格	Dual-Port SRAM, 128KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
IDT70V639S10PRF9	IDT	获取价格	Dual-Port SRAM, 128KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
IDT70V639S10PRFI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S12BC	IDT	获取价格	HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S12BC8	IDT	获取价格	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-

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