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IDT70V639S10PRF9 PDF预览

IDT70V639S10PRF9

更新时间: 2024-10-28 21:17:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
23页 318K
描述
Dual-Port SRAM, 128KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128

IDT70V639S10PRF9 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 20 MM, 1.40 MM HEIGHT, TQFP-128针数:128
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.58
最长访问时间:10 nsJESD-30 代码:R-PQFP-G128
JESD-609代码:e0长度:20 mm
内存密度:2359296 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:128
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX18
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):3.15 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

IDT70V639S10PRF9 数据手册

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HIGH-SPEED 3.3V 128K x 18  
ASYNCHRONOUS DUAL-PORT  
STATIC RAM  
IDT70V639S  
Features  
True Dual-Port memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
Fully asynchronous operation from either port  
Separate byte controls for multiplexed bus and bus  
matching compatibility  
Supports JTAG features compliant to IEEE 1149.1  
– Due to limited pin count, JTAG is not supported on the  
128-pin TQFP package.  
– Commercial:10/12/15ns(max.)  
– Industrial: 12/15ns(max.)  
Dual chip enables allow for depth expansion without  
external logic  
IDT70V639 easily expands data bus width to 36 bits or  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
Busy and Interrupt Flags  
LVTTL-compatible, single 3.3V (±150mV) power supply for  
core  
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)  
power supply for I/Os and control signals on each port  
Available in a 128-pin Thin Quad Flatpack, 208-ball fine  
pitch Ball Grid Array, and 256-ball Ball Grid Array  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Functional Block Diagram  
UB  
L
L
UB  
R
LB  
LB  
R
R/  
WL  
R/  
WR  
B
B
E
1
L
B
E
1
B
E
0
E
0
L
CE0L  
CE0R  
R
R
CE1L  
CE1R  
OEL  
OER  
Dout0-8_L  
Dout9-17_L  
Dout0-8_R  
Dout9-17_R  
128K x 18  
MEMORY  
ARRAY  
Din_L  
I/O0L- I/O17L  
Din_R  
I/O0R - I/O17R  
A
16R  
0R  
Address  
Decoder  
Address  
Decoder  
A
16L  
0L  
ADDR_L  
ADDR_R  
A
A
OE  
L
OER  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0R  
CE1R  
CE0L  
CE1L  
R/WL  
R/WR  
BUSY  
SEM  
INT  
R
BUSY  
SEM  
INT  
L
L
M/S  
R
L
R
TMS  
TCK  
TDI  
TDO  
JTAG  
TRST  
5621 drw 01  
NOTES:  
1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
OCTOBER 2004  
1
DSC-5621/4  
©2004IntegratedDeviceTechnology,Inc.  

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