是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | QFP |
包装说明: | LFQFP, | 针数: | 128 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.32 |
最长访问时间: | 12 ns | JESD-30 代码: | R-PQFP-G128 |
JESD-609代码: | e3 | 长度: | 20 mm |
内存密度: | 2359296 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 18 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 128 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX18 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFQFP |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK, LOW PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.6 mm |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70V639S12PRFGI8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, TQFP-128 | |
IDT70V639S12PRFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM | |
IDT70V639S12PRFI8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 | |
IDT70V639S15BC | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM | |
IDT70V639S15BCG | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREE | |
IDT70V639S15BCG8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256 | |
IDT70V639S15BCGI | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREE | |
IDT70V639S15BCI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM | |
IDT70V639S15BCI8 | IDT |
获取价格 |
Application Specific SRAM, 128KX18, 15ns, CMOS, PBGA256 | |
IDT70V639S15BF | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM |