IDT70V631S10BFI

更新时间： 2024-10-27 22:08:27

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
23页	306K
描述
HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT70V631S10BFI 数据手册

HIGH-SPEED 3.3V 256K x 18

ASYNCHRONOUS DUAL-PORT

STATIC RAM

IDT70V631S

Features

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

◆

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package.

◆

– Commercial:10/12/15ns(max.)

– Industrial: 12ns (max.)

Dual chip enables allow for depth expansion without

external logic

IDT70V631 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

◆

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 128-pin Thin Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Functional Block Diagram

UBL

LBL

R/WR

CE0L

CE0R

CE1L

CE1R

OEL

OER

Dout0-8_L

Dout0-8_R

Dout9-17_L

Dout9-17_R

256K x 18

MEMORY

ARRAY

Din_L

I/O0L- I/O17L

Din_R

I/O0R - I/O17R

17R

Address

Decoder

Address

Decoder

17L

ADDR_L

ADDR_R

OER

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

CE0R

CE1R

CE0L

CE1L

R/WL

R/WR

BUSY

SEM

INT

M/S

SEM

INT

TMS

TCK

TDI

JTAG

TDO

TRST

5622 drw 01

NOTES:

1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).

2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).

OCTOBER 2003

DSC-5622/5

12 3 4 5 6 7...23

中文翻译

下载PDF

与IDT70V631S10BFI相关器件

型号	品牌	获取价格	描述	数据表
IDT70V631S10PRF	IDT	获取价格	HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V631S10PRFG	IDT	获取价格	Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
IDT70V631S10PRFG8	IDT	获取价格	Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP128, TQFP-128
IDT70V631S10PRFI	IDT	获取价格	HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V631S12BC	IDT	获取价格	HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V631S12BC8	IDT	获取价格	Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-
IDT70V631S12BCG	IDT	获取价格	暂无描述
IDT70V631S12BCG8	IDT	获取价格	Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, BGA-256
IDT70V631S12BCGI	IDT	获取价格	Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-
IDT70V631S12BCI	IDT	获取价格	HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

与IDT70V631S10BFI相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70V631S10BFI

IDT70V631S10BFI 数据手册

与IDT70V631S10BFI相关器件

与IDT70V631S10BFI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70V631S10BFI

IDT70V631S10BFI 数据手册

与IDT70V631S10BFI相关器件

与IDT70V631S10BFI相关文章

您还可以找

您在本页遇到什么问题？