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IDT70825S25GB PDF预览

IDT70825S25GB

更新时间： 2024-11-10 22:57:19
品牌 Logo 应用领域
艾迪悌 - IDT 存储
页数 文件大小 规格书
21页 319K
描述
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

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中文翻译

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IDT70825S25GB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：PGA
包装说明：PGA,针数：84
Reach Compliance Code：compliantECCN代码：3A001.A.2.C
HTS代码：8542.32.00.41风险等级：5.89
最长访问时间：25 ns其他特性：ALSO REGISTERED SEQUENTIAL ACCESS PORT; TSU=5NS; TCO=25NS
JESD-30 代码：S-CPGA-P84JESD-609代码：e0
长度：27.94 mm内存密度：131072 bit
内存集成电路类型：MULTI-PORT SRAM内存宽度：16
功能数量：1端口数量：2
端子数量：84字数：8192 words
字数代码：8000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：8KX16输出特性：3-STATE
可输出：YES封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：PGA封装形状：SQUARE
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：225认证状态：Not Qualified
座面最大高度：5.207 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：MILITARY端子面层：TIN LEAD
端子形式：PIN/PEG端子节距：2.54 mm
端子位置：PERPENDICULAR处于峰值回流温度下的最长时间：30
宽度：27.94 mm

IDT70825S25GB 数据手册

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IDT70825S/L  
HIGH-SPEED 8K x 16  
SEQUENTIAL ACCESS  
RANDOM ACCESS MEMORY (SARAM™)  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
• 8K x 16 Sequential Access Random Access Memory  
The IDT70825 is a high-speed 8K x 16-bit Sequential  
Access Random Access Memory (SARAM). The SARAM  
(SARAM™)  
- Sequential Access from one port and standard Random offers a single-chip solution to buffer data sequentially on one  
Access from the other port  
- Separate upper-byte and lower-byte control of the  
Random Access Port  
port, and be accessed randomly (asynchronously) through  
the other port. The device has a Dual-Port RAM based  
architecture with a standard SRAM interface for the random  
(asynchronous) access port, and a clocked interface with  
counter sequencing for the sequential (synchronous) access  
port.  
• High-speed operation  
- 20ns tAA for random access port  
- 20ns tCD for sequential port  
- 25ns clock cycle time  
Fabricated using CMOS high-performance technology,  
this memory device typically operates on less than 900mW of  
power at maximum high-speed clock-to-data and Random  
Access. An automatic power down feature, controlled by CE,  
permits the on-chip circuitry of each port to enter a very low  
standby power mode.  
• Architecture based on Dual-Port RAM cells  
• Electrostatic discharge > 2001V, Class II  
• Compatible with Intel BMIC and 82430 PCI Set  
• Width and Depth Expandable  
• Sequential side  
- Address based flags for buffer control  
- Pointer logic supports two internal buffers  
• Battery backup operation—2V data retention  
• TTL-compatible, single 5V (±10%) power supply  
• Available in 80-pin TQFP and 84-pin PGA  
• Military product compliant to MIL-STD-883.  
• Industrialtemperaturerange(–40°Cto+85°C)isavailable,  
tested to military electrical specifications.  
The IDT70825 is packaged in a 80-pin Thin Plastic Quad  
Flatpack (TQFP) or 84-pin Ceramic Pin Grid Array (PGA).  
Military grade product is manufactured in compliance with the  
latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
FUNCTIONAL BLOCK DIAGRAM  
13  
A
0-12  
SCLK  
Random  
Access  
Port  
Sequential  
Access  
Port  
Controls  
1
R
LSB  
2
Controls  
MSB  
8K X 16  
Memory  
Array  
SR
16  
16  
16  
Data  
R
Reg.  
13  
I/O0-15  
Data  
L
SI/O0-15  
13  
Addr  
L
Addr  
R
13  
RST  
13  
Pointer/  
Counter  
13  
13  
Start Address for Buffer #1  
End Address for Buffer #1  
Start Address for Buffer #2  
End Address for Buffer #2  
Flow Control Buffer  
13  
1
2
COMPARATOR  
Flag Status  
3016 drw 01  
The IDT logo is a registered trademark and SARAM is a trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
OCTOBER 1996  
©1996 Integrated Device Technology, Inc.  
DSC-3016/6  
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.  
6.31  
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