HIGH SPEED 64K (4K X 16 BIT)
SEQUENTIAL ACCESS
IDT70824S/L
RANDOM ACCESS MEMORY (SARAM™)
Features
◆
◆
High-speed access
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
– Address based flags for buffer control
◆
– Military:35/45ns(max.)
◆
– Commercial:20/25/35/45ns(max.)
Low-power operation
◆
– IDT70824S
– Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
◆
Active:775mW(typ.)
Standby: 5mW (typ.)
– IDT70824L
◆
◆
◆
Active:775mW(typ.)
Standby: 1mW (typ.)
◆
◆
™
4Kx16SequentialAccess RandomAccess Memory (SARAM )
– Sequential Access from one port and standard Random
Access from the other port
– Separate upper-byte and lower-byte control of the
RandomAccessPort
High speed operation
– 20ns tAA for random access port
– 20ns tCD for sequential port
Description
TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandom
AccessMemory(SARAM).TheSARAMoffersasingle-chipsolutionto
bufferdatasequentiallyononeport,andbeaccessedrandomly(asyn-
chronously) through the other port. The device has a Dual-Port RAM
based architecture with a standard SRAM interface for the random
(asynchronous) access port, and a clocked interface with counter se-
◆
◆
– 25nsclockcycletime
Architecture based on Dual-Port RAM cells
FunctionalBlockDiagram
12
RST
SCLK
CNTEN
A0-11
CE
OE
Random
Access
Port
Sequential
SOE
Access
R/W
SSTRT
SSTRT
SCE
SR/W
SLD
1
2
Port
Controls
LB LSB
Controls
UB MSB
CMD
4K X 16
Memory
Array
16
16
16
Data
R
Reg.
12
Data
L
I/O0-15
SI/O0-15
,
12
Addr
L
Addr
R
12
RST
12
Pointer/
Counter
12
12
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
12
EOB
1
2
COMPARATOR
EOB
Flag Status
3099 drw 01
MAY 2000
1
©2000IntegratedDeviceTechnology,Inc.
DSC-3099/5
6.07