5秒后页面跳转
IDT7008S25J PDF预览

IDT7008S25J

更新时间: 2024-11-10 23:01:07
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器
页数 文件大小 规格书
19页 167K
描述
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM

IDT7008S25J 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:LCC
包装说明:1.15 X 1.15 INCH, 0.17 INCH HEIGHT, PLASTIC, LCC-84针数:84
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.13
Is Samacsys:N最长访问时间:25 ns
其他特性:INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODEI/O 类型:COMMON
JESD-30 代码:S-PQCC-J84JESD-609代码:e0
长度:29.3116 mm内存密度:524288 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端口数量:2端子数量:84
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC84,1.2SQ封装形状:SQUARE
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:4.57 mm
最大待机电流:0.015 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.305 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:29.3116 mm
Base Number Matches:1

IDT7008S25J 数据手册

 浏览型号IDT7008S25J的Datasheet PDF文件第2页浏览型号IDT7008S25J的Datasheet PDF文件第3页浏览型号IDT7008S25J的Datasheet PDF文件第4页浏览型号IDT7008S25J的Datasheet PDF文件第5页浏览型号IDT7008S25J的Datasheet PDF文件第6页浏览型号IDT7008S25J的Datasheet PDF文件第7页 
HIGH-SPEED  
IDT7008S/L  
64K x 8 DUAL-PORT  
STATIC RAM  
Features  
IDT7008 easily expands data bus width to 16 bits or  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
Interrupt Flag  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
Military:25/35/55ns(max.)  
Industrial:55ns (max.)  
– Commercial:20/25/35/55ns(max.)  
Low-power operation  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
IDT7008S  
Active:750mW(typ.)  
Standby: 5mW (typ.)  
IDT7008L  
Active:750mW(typ.)  
Standby: 1mW (typ.)  
Dual chip enables allow for depth expansion without  
external logic  
Fully asynchronous operation from either port  
TTL-compatible, single 5V (±10%) power supply  
Available in 84-pin PGA, 84-pin PLCC, and a 100-pin TQFP  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
FunctionalBlockDiagram  
R/WL  
CE0L  
CE1L  
R/WR  
CE0R  
CE1R  
OEL  
OER  
I/O  
Control  
I/O  
Control  
I/O0-7L  
I/O0-7R  
(1,2)  
BUSYL  
(1,2)  
BUSYR  
64Kx8  
MEMORY  
ARRAY  
7008  
A15L  
A15R  
Address  
Decoder  
Address  
Decoder  
A0R  
A0L  
16  
16  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0L  
CE0R  
1L  
CE  
1R  
CE  
OEL  
OER  
L
R/  
W
R
R/W  
SEML  
INTL  
SEMR  
INTR  
(2)  
(2)  
M/S(1)  
3198 drw 01  
NOTES:  
1. BUSY is an input as a Slave (M/S = VIL) and an output when it is a Master (M/S = VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
MAY 2000  
1
DSC 3198/6  
©2000IntegratedDeviceTechnology,Inc.  

与IDT7008S25J相关器件

型号 品牌 获取价格 描述 数据表
IDT7008S25J8 IDT

获取价格

Dual-Port SRAM, 64KX8, 25ns, CMOS, PQCC84, 1.15 X 1.15 INCH, 0.17 INCH HEIGHT, PLASTIC, LC
IDT7008S25JB IDT

获取价格

HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008S25JG IDT

获取价格

Dual-Port SRAM, 64KX8, 25ns, CMOS, PQCC84, 1.15 X 1.15 INCH, 0.17 INCH HEIGHT, PLASTIC, LC
IDT7008S25JGB IDT

获取价格

暂无描述
IDT7008S25JI IDT

获取价格

HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008S25PF IDT

获取价格

HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008S25PF9 IDT

获取价格

Dual-Port SRAM, 64KX8, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
IDT7008S25PFB IDT

获取价格

HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008S25PFG IDT

获取价格

Dual-Port SRAM, 64KX8, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
IDT7008S25PFGB IDT

获取价格

Dual-Port SRAM, 64KX8, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100