Datasheet > ID100_TO-78

ID100_TO-78

更新时间： 2024-11-11 11:14:59

品牌	Logo	应用领域
MICROSS		二极管
页数	文件大小	规格书
1页	309K
描述
a low leakage Monolithic Dual Pico-Amp Diode

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ID100_TO-78 数据手册

ID100

LOW LEAKAGE

PICO-AMP DUAL DIODE

Linear Systems replaces discontinued Intersil ID100

The ID100 is a low leakage Monolithic Dual Pico-Amp Diode

FEATURES

The ID100 low-leakage monolithic dual diode provides a

DIRECT REPLACEMENT FOR INTERSIL ID100

REVERSE LEAKAGE CURRENT

REVERSE BREAKDOWN VOLTAGE

REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS (Note 1)

@ 25°C (unless otherwise noted)

superior alternative to conventional diode technology

when reverse current (leakage) must be minimized. In

addition the monolithic dual construction allows

excellent capacitance matching per diode. The ID100

features a leakage current of 0.1 pA and is well suited

for use in applications such as input protection for

operational amplifiers.

I_R= 0.1pA

BV_R≥ 30V

C_rss= 0.75pF

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

ID100 Benefits:

‐65°C to +200°C

‐55°C to +150°C

Negligible Circuit Leakage Contribution

Circuit “Transparent” Except to Shunt

High-Frequency Spikes

300mW

Simplicity of Operation

Forward Current

20mA

Reverse Current

Maximum Voltages

100µA

ID100 Applications:

Reverse Voltage

Diode to Diode Voltage

30V

±50V

Op Amp Input Protection

Multiplexer Overvoltage Protection

ID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_R

V_F

CHARACTERISTICS

Reverse Breakdown Voltage

Forward Voltage

MIN.

0.8

‐‐

TYP.

‐‐

0.1

2.0

‐‐

MAX.

‐‐

1.1

‐‐

UNITS

CONDITIONS

I_R= 1µA

I_F= 10mA

V_R= 1V

I_R

Reverse Leakage Current

V_R= 10V

|I_R1‐I_R2|

Differential Leakage Current

C_rSS

Total Reverse Capacitance(Note 2)

‐‐

0.75

V_R= 10V, f = 1MHz

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Note 1 - Absolute maximum ratings are limiting values above which ID100 serviceability may be impaired.

Note 2 - Design reference only, not 100% tested

FIGURE 1 – Operational Amplifier Protection

FIGURE 2 – Sample & Hold Circuit

Input Differential Voltage limited to 0.8V (typ) by Diodes ID100

D₁and D₂. Common Mode Input voltage limited by Diodes ID100

D₃and D₄to ±15V.

Typical Sample and Hold circuit with clipping. ID100 diodes

reduce offset voltages fed capacitively from the ID100 switch

gate.

TO-78 (Bottom View)

Available Packages:

ID100 in TO-78

Micross Components Europe

ID100 available as bare die

Tel: +44 1603 788967

Please contact Micross for

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

full package and die dimensions

Note pins 3 & 5 must not be connected, in

any fashion or manner, to any circuit or node

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: baredie@micross.com Web: www.micross.com/distribution.aspx

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与ID100_TO-78相关器件

型号	品牌	获取价格	描述	数据表
ID1000	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18
ID1001	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18
ID1002	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18
ID1003	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-18
ID1004	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-18
ID1005	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-18
ID1006	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.785A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-18
ID101	INTERSIL	获取价格	N-CHANNEL JFET
ID101	MICROSS	获取价格	a low leakage Monolithic Dual Pico-Amp Diode
ID101	MICROSEMI	获取价格	SCRs .5 Amp, Planar

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