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IBM0418A41NLAB-3 PDF预览

IBM0418A41NLAB-3

更新时间: 2024-02-18 17:28:29
品牌 Logo 应用领域
国际商业机器公司 - IBM 静态存储器
页数 文件大小 规格书
25页 477K
描述
Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, BGA-119

IBM0418A41NLAB-3 技术参数

生命周期:Contact Manufacturer零件包装代码:BGA
包装说明:BGA, BGA119,7X17,50针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.51
最长访问时间:2 ns其他特性:LATE WRITE
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
长度:22 mm内存密度:4718592 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
功能数量:1端子数量:119
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:256KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL电源:2.5,3.3 V
认证状态:Not Qualified座面最大高度:2.679 mm
最大待机电流:0.1 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.415 mA
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

IBM0418A41NLAB-3 数据手册

 浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第4页浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第5页浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第6页浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第8页浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第9页浏览型号IBM0418A41NLAB-3的Datasheet PDF文件第10页 
IBM0436A41NLAB IBM0418A41NLAB  
IBM0418A81NLAB IBM0436A81NLAB  
8Mb (256Kx36 & 512Kx18) and 4Mb (128Kx36 & 256Kx18) SRAM  
Clock Truth Table  
K
ZZ  
SS  
SW  
H
L
SBWa  
SBWb  
SBWc  
SBWd  
DQ (n)  
DQ (n+1)  
Mode  
DOUT 0-35  
L
L
X
L
X
H
L
X
H
H
L
X
H
H
H
L
X
X
X
X
X
Read Cycle All Bytes  
Write Cycle 1st Byte  
Write Cycle 2nd Byte  
Write Cycle 3rd Byte  
Write Cycle 4th Byte  
LH  
LH  
LH  
LH  
LH  
DIN 0-8  
L
L
DIN 9-17  
L
L
L
H
H
H
DIN 18-26  
L
L
L
H
H
DIN 27-35  
L
L
L
H
D
IN 0-35  
L
L
L
L
L
L
L
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
X
X
Write Cycle All Bytes  
Abort Write Cycle  
Deselect Cycle  
Sleep Mode  
LH  
LH  
LH  
X
High-Z  
High-Z  
High-Z  
L
H
X
X
X
X
H
High-Z  
Output Enable Truth Table  
Operation (n, n+1)  
G (n)  
DQ (n)  
DQ (n+1)  
DOUT 0-35  
DOUT 0-35  
Read  
L
H
X
X
X
Read  
High-Z  
High-Z  
X
High-Z  
High-Z  
High-Z  
High-Z  
Sleep (ZZ = H)  
Write (SW = L)  
Deselect (SS = H)  
X
Absolute Maximum Ratings  
Item  
Power Supply Voltage  
Output Power Supply Voltage  
Input Voltage  
Symbol  
Rating  
Units  
V
Notes  
VDD  
VDDQ  
VIN  
-0.5 to 4.3  
-0.5 to 2.825  
-0.5 to 4.3  
-0.5 to 2.825  
0 to 85  
1
1
V
V
1, 2  
1
VDQIN  
TA  
DQ Input Voltage  
V
Operating Temperature  
Junction Temperature  
Storage Temperature  
1
°C  
°C  
°C  
TJ  
110  
1
TSTG  
-55 to +125  
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
2. Excludes DQ inputs.  
crrL3325.06.fm  
June 13, 2002  
Page 7 of 25  

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