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IBM0418A41NLAB-3 PDF预览

IBM0418A41NLAB-3

更新时间: 2024-02-19 02:23:22
品牌 Logo 应用领域
国际商业机器公司 - IBM 静态存储器
页数 文件大小 规格书
25页 477K
描述
Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, BGA-119

IBM0418A41NLAB-3 技术参数

生命周期:Contact Manufacturer零件包装代码:BGA
包装说明:BGA, BGA119,7X17,50针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.51
最长访问时间:2 ns其他特性:LATE WRITE
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
长度:22 mm内存密度:4718592 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
功能数量:1端子数量:119
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:256KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL电源:2.5,3.3 V
认证状态:Not Qualified座面最大高度:2.679 mm
最大待机电流:0.1 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.415 mA
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

IBM0418A41NLAB-3 数据手册

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