Datasheet > HYS6472V4200GU

HYS6472V4200GU

更新时间： 2024-11-10 22:08:59

品牌	Logo	应用领域
英飞凌 - INFINEON		动态存储器
页数	文件大小	规格书
15页	78K
描述
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

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中文翻译

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数据手册

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HYS6472V4200GU 数据手册

3.3V 4M x 64/72-Bit 1 BANK SDRAM Module

3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

HYS64(72)V4200GU

HYS64(72)V8220GU

PC66 & PC100 168 pin unbuffered DIMM Modules

• 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules

for PC main memory applications

• One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation

• Optimized for byte-write non-parity and ECC applications

• JEDEC standard Synchronous DRAMs (SDRAM)

• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification

• SDRAM Performance:

-8

-8B

100

-10

Units

MHz

f_CK

t_AC

Clock frequency (max.)

Clock access time

100

• Programmed Latencies :

Product Speed

tRCD

tRP

-8

PC100

PC66

-8B

-10

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E PROM

• Utilizes 4M x16 SDRAMs in TSOPII-54 packages

• 4096 refresh cycles every 64 ms

• 133,35 mm x 29,31 mm x 4,00 mm card size with gold contact pads

Semiconductor Group

8.98

12 3 4 5 6 7...15

中文翻译

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