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HYMP112F72CP8D5-Y5 PDF预览

HYMP112F72CP8D5-Y5

更新时间: 2024-11-11 07:02:51
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
32页 1179K
描述
240pin Fully Buffered DDR2 SDRAM DIMMs

HYMP112F72CP8D5-Y5 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.69Is Samacsys:N
访问模式:SINGLE BANK PAGE BURST其他特性:AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
最大时钟频率 (fCLK):333 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N240长度:133.35 mm
内存密度:1073741824 bit内存集成电路类型:DDR DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:240
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX8
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM240,40
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):260电源:1.5,1.8 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:30.35 mm自我刷新:YES
子类别:Other Memory ICs最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:8.2 mm
Base Number Matches:1

HYMP112F72CP8D5-Y5 数据手册

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240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver.  
This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow  
host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that  
isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of  
each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the  
host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host  
controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point  
Link Interface at 1.5V power.  
The AMB also allows buffering of memory traffic to support large memory capacities. All memory control  
for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,  
scrubbing, sparing, configuration access and power management. The AMB interface is responsible for  
handling channel and memory requests to and from the local FBDIMM and for forwarding request to other  
FBDIMMs on the memory channel.  
FEATURES  
240 pin Fully Buffered ECC Dual-In-Line DDR2 SDRAM Module  
JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply  
All inputs and outputs are compatible with SSTL_1.8 interface  
Built with 1Gb DDR2 SDRAMs in 60ball FBGA  
Host interface and AMB component industry standard compliant  
MBIST, IBIST test functions  
8 Bank architecture  
OCD (Off-Chip Driver Impedance Adjustment)  
ODT (On-Die Termination)  
Fully differential clock operations (CK & CK)  
Programmable Burst Length 4 / 8 with both sequential and interleave mode  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
Serial presence detect with EEPROM  
133.35 x 30.35 mm form factor  
RoHS compliant  
Full DIMM Heat Spreader  
This document is a general product description and is subject to change without notice. Hynix Electronics does not  
assume any responsibility for use of circuits described. No patent licenses are implied.  
Rev 1.01 /Sep. 2008  
1

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