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HYMD564M646AL8-H PDF预览

HYMD564M646AL8-H

更新时间: 2024-11-11 05:38:47
品牌 Logo 应用领域
海力士 - HYNIX 双倍数据速率
页数 文件大小 规格书
17页 312K
描述
Unbuffered DDR SO-DIMM

HYMD564M646AL8-H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MODULE包装说明:DIMM, DIMM200
针数:200Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.92访问模式:SINGLE BANK PAGE BURST
最长访问时间:0.75 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N200内存密度:4294967296 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:200字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX64输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM200封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
子类别:DRAMs最大压摆率:3.04 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HYMD564M646AL8-H 数据手册

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64Mx64 bits  
Unbuffered DDR SO-DIMM  
HYMD564M646A(L)8-J/K/H  
Document Title  
64Mx64 bits Unbuffered DDR SO-DIMM  
Revision History  
No.  
History  
Draft Date  
Remark  
0.1  
Initial draft  
Jan. 2003  
1) Reflected a “notational” change in module thickness on page 14 - Not Real ! -  
2) Defined Pin Cap. Spec.  
0.2  
Apr. 2004  
3) Corrected some typos  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.2 / Apr. 2004  
1

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