是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | MODULE | 包装说明: | DIMM, DIMM200 |
针数: | 200 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.36 |
风险等级: | 5.92 | 访问模式: | SINGLE BANK PAGE BURST |
最长访问时间: | 0.75 ns | 其他特性: | AUTO/SELF REFRESH |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-XDMA-N200 | 内存密度: | 4294967296 bit |
内存集成电路类型: | DDR DRAM MODULE | 内存宽度: | 64 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 200 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 64MX64 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | DIMM |
封装等效代码: | DIMM200 | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 自我刷新: | YES |
子类别: | DRAMs | 最大压摆率: | 3.04 mA |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HYMD564M646AL8-J | HYNIX |
获取价格 |
Unbuffered DDR SO-DIMM | |
HYMD564M646AL8-K | HYNIX |
获取价格 |
Unbuffered DDR SO-DIMM | |
HYMD564M646B6-D43 | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646B6-H | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646B6-J | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646BL6-D43 | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646BL6-H | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646BL6-J | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) | |
HYMD564M646BLP6-D4 | HYNIX |
获取价格 |
DDR DRAM Module, 64MX64, 0.7ns, CMOS, SODIMM-200 | |
HYMD564M646BLP6-D43 | HYNIX |
获取价格 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP) |