Datasheet > 存储 > DRAM> HYMD216726A6-M

HYMD216726A6-M

更新时间： 2024-11-11 05:37:15

品牌	Logo	应用领域
海力士 - HYNIX		存储内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
16页	239K
描述
Unbuffered DDR SO-DIMM

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技术参数
数据手册

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HYMD216726A6-M 技术参数

生命周期：	Obsolete	零件包装代码：	DIMM
包装说明：	DIMM, DIMM184(UNSPEC)	针数：	184
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.36	风险等级：	5.84
Is Samacsys：	N	访问模式：	SINGLE BANK PAGE BURST
最长访问时间：	0.75 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-XDMA-N184	内存密度：	1207959552 bit
内存集成电路类型：	DDR DRAM MODULE	内存宽度：	72
功能数量：	1	端口数量：	1
端子数量：	184	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	16MX72	输出特性：	3-STATE
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装等效代码：	DIMM184(UNSPEC)	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
自我刷新：	YES	最大待机电流：	0.1 A
子类别：	DRAMs	最大压摆率：	1.675 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	NO LEAD	端子位置：	DUAL
Base Number Matches：	1

HYMD216726A6-M 数据手册

16Mx72 bits

Unbuffered DDR SO-DIMM

HYMD216726A(L)6-M/K/H/L

DESCRIPTION

Hynix HYMD216726A(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD216726A(L)6-M/K/

H/L series consists of eighteen 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.

Hynix HYMD216726A(L)6-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of

industry standard. It is suitable for easy interchange and addition.

Hynix HYMD216726A(L)6-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on

both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high

bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable

latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD216726A(L)6-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x72) Unbuffered DDR DIMM based on

16Mx16 DDR SDRAM

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

•

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

Data inputs on DQS centers when write (centered

DQ)

•

Error Check Correction (ECC) Capability

Data strobes synchronized with output data for read

and input data for write

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

•

tRAS Lock-out function supported

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192refresh cycles / 64ms

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Pactor

HYMD216726A(L)6-M

HYMD216726A(L)6-K

HYMD216726A(L)6-H

HYMD216726A(L)6-L

133MHz (*DDR266:2-2-2)

133MHz(*DDR266A)

133MHz(*DDR266B)

100MHz(*DDR200)

VDD=2.5V

VDDQ=2.5V

184pin Unbuffered DIMM

5.25 x 1.25 x 0.15 inch

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.2/May. 02

12 3 4 5 6 7...16

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与HYMD216726A6-M相关器件

型号	品牌	获取价格	描述	数据表
HYMD216726AL6	ETC	获取价格	16Mx72\|2.5V\|M/K/H/L\|x5\|DDR SDRAM - Unbuffered DIMM 128MB
HYMD216726AL6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726AL6J	ETC	获取价格	16Mx72\|2.5V\|J\|x5\|DDR SDRAM - Unbuffered DIMM 128MB
HYMD216726AL6J-J	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726AL6-K	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726AL6-L	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726AL6-M	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726C6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726C6-K	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216726C6-L	HYNIX	获取价格	Unbuffered DDR SO-DIMM

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