Datasheet > HYMD216M646AL6-M

HYMD216M646AL6-M

更新时间： 2024-11-11 15:34:23

品牌	Logo	应用领域
海力士 - HYNIX		时钟动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
19页	286K
描述
DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200

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技术参数
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HYMD216M646AL6-M 技术参数

生命周期：	Obsolete	零件包装代码：	MODULE
包装说明：	DIMM, DIMM200,24	针数：	200
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.32	风险等级：	5.84
访问模式：	SINGLE BANK PAGE BURST	最长访问时间：	0.75 ns
其他特性：	AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	133 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-XDMA-N200
内存密度：	1073741824 bit	内存集成电路类型：	DDR DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	200
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	16MX64
输出特性：	3-STATE	封装主体材料：	UNSPECIFIED
封装代码：	DIMM	封装等效代码：	DIMM200,24
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
电源：	2.5 V	认证状态：	Not Qualified
刷新周期：	8192	自我刷新：	YES
子类别：	DRAMs	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子节距：	0.6 mm	端子位置：	DUAL
Base Number Matches：	1

HYMD216M646AL6-M 数据手册

16Mx64 bits

Unbuffered DDR SO-DIMM

HYMD216M646A(L)6-J/M/K/H/L

DESCRIPTION

Hynix HYMD216M646A(L)6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Out-

line Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx64 high-speed memoryarrays. Hynix

HYMD216M646A(L)6-J/M/K/H/L series consists of four 16Mx16 DDR SDRAM in 400mil TSOP II packages on a

200pin glass-epoxy substrate. Hynix HYMD216M646A(L)6-J/M/K/H/L series provide a high performance 8-byte inter-

face in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD216M646A(L)6-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs

are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-

ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.

All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and

burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD216M646A(L)6-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect func-

tion is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to

identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x 64) Unbuffered DDR SO-DIMM

based on 16Mx16 DDR SDRAM

•

Data inputs on DQS centers when write (centered

DQ)

•

JEDEC Standard 200-pin small outline dual in-line

memory module (SO-DIMM)

Data strobes synchronized with output data for read

and input data for write

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz/166MHz

•

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD216M646A(L)6-J

HYMD216M646A(L)6-M

HYMD216M646A(L)6-K

HYMD216M646A(L)6-H

HYMD216M646A(L)6-L

166MHz (*DDR333)

133MHz (*DDR266:2-2-2)

133MHz(*DDR266A)

133MHz(*DDR266B)

100MHz(*DDR200)

VDD=2.5V

VDDQ=2.5V

200pin Unbuffered SO-DIMM

67.6mm x 31.75mm x 1mm

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.5/Oct. 04

12 3 4 5 6 7...19

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与HYMD216M646AL6-M相关器件

型号	品牌	获取价格	描述	数据表
HYMD216M646C6-D4	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-D43	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-J	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-K	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-L	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646C6-M	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646CL6-D4	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646CL6-D43	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M646CL6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM

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