Datasheet > 存储 > DRAM> HYMD216M646D6-H

HYMD216M646D6-H

更新时间： 2024-11-11 05:38:47

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器双倍数据速率
页数	文件大小	规格书
23页	260K
描述
200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)

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HYMD216M646D6-H 数据手册

200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)

This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR

SDRAMs in 400 mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered

SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is

suitable for easy interchange and addition.

FEATURES

•

JEDEC Standard 200-pin small outline, dual in-line

memory module (SO-DIMM)

•

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

Two ranks 32M x 64 and One rank 32M x 64, 16M x

64 organization

Edge-aligned DQS with data outs and Center-aligned

DQS with data inputs

•

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

2.6V ± 0.1V VDD and VDDQ Power supply for

DDR400, 2.5V ± 0.2V for DDR333 and below

All inputs and outputs are compatible with SSTL_2

interface

Serial Presence Detect (SPD) with EEPROM

Built with 256Mb DDR SDRAMs in 400 mil TSOP II

packages

Fully differential clock operations (CK & /CK) with

133/166/200MHz

•

Lead-free product listed for each configuration

(RoHS compliant)

•

DLL aligns DQ and DQS transition with CK transition

Programmable CAS Latency: DDR266(2, 2.5 clock),

DDR333(2.5 clock), DDR400(3 clock)

ADDRESS TABLE

# of

DRAMs

Refresh

# of row/bank/column Address

Method

Organization

Ranks

SDRAMs

256MB

128MB

32M x 64

16M x 64

16Mb x 16

32Mb x 8

16Mb x 16

13(A0~A12)/2(BA0,BA1)/9(A0~A8)

13(A0~A12)/2(BA0,BA1)/10(A0~A9)

13(A0~A12)/2(BA0,BA1)/9(A0~A8)

8K / 64ms

PERFORMANCE RANGE

-D43¹

DDR400B

3-3-3

200

Part-Number Suffix

Speed Bin

-J

DDR333

2.5-3-3

-K

DDR266A

2-3-3

-H

DDR266B

2.5-3-3

Unit

CL - tRCD- tRP

CL=3

MHz

Max Clock

Frequency

CL=2.5

166

133

CL=2

133

Note:

1. 2.6V +/- 0.1V VDD and VDDQ Power supply for DDR400 and 2.5V +/- 0.2V for DDR333 and below

Rev. 1.1 / May. 2005

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

12 3 4 5 6 7...23

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与HYMD216M646D6-H相关器件

型号	品牌	获取价格	描述	数据表
HYMD216M646D6-J	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646D6-K	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DL6-D43	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DL6-H	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DL6-J	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DL6-K	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DLP6-D43	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DLP6-H	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DLP6-J	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
HYMD216M646DLP6-K	HYNIX	获取价格	200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)

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