Datasheet > 存储 > DRAM> HYMD216M726A6-M

HYMD216M726A6-M

更新时间： 2024-11-11 05:37:15

品牌	Logo	应用领域
海力士 - HYNIX		存储内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
19页	298K
描述
Unbuffered DDR SO-DIMM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HYMD216M726A6-M 技术参数

生命周期：	Obsolete	零件包装代码：	MODULE
包装说明：	DIMM, DIMM200,24	针数：	200
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.36	风险等级：	5.84
Is Samacsys：	N	访问模式：	SINGLE BANK PAGE BURST
最长访问时间：	0.75 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-XDMA-N200	内存密度：	1207959552 bit
内存集成电路类型：	DDR DRAM MODULE	内存宽度：	72
功能数量：	1	端口数量：	1
端子数量：	200	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	16MX72	输出特性：	3-STATE
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装等效代码：	DIMM200,24	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
自我刷新：	YES	最大待机电流：	0.1 A
子类别：	DRAMs	最大压摆率：	1.675 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	NO LEAD	端子节距：	0.6 mm
端子位置：	DUAL	Base Number Matches：	1

HYMD216M726A6-M 数据手册

16Mx72 bits

Unbuffered DDR SO-DIMM

HYMD216M726A(L)6-J/M/K/H/L

DESCRIPTION

Hynix HYMD216M726A(L)6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Out-

line Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix

HYMD216M726A(L)6-J/M/K/H/L series consists of five 16Mx16 DDR SDRAM in 400mil TSOP II packages on a

200pin glass-epoxy substrate. Hynix HYMD216M726A(L)6-J/M/K/H/L series provide a high performance 8-byte inter-

face in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD216M726A(L)6-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchro-

nous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on

both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high

bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable

latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD216M726A(L)6-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect func-

tion is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to

identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x72) Unbuffered DDR SO-DIMM ECC-

based on 16Mx16 DDR SDRAM

•

Data inputs on DQS centers when write (centered

DQ)

•

JEDEC Standard 200-pin small outline dual in-line

memory module (SO-DIMM)

Data strobes synchronized with output data for read

and input data for write

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz/166MHz

•

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD216M726A(L)6-J

HYMD216M726A(L)6-M

HYMD216M726A(L)6-K

HYMD216M726A(L)6-H

HYMD216M726A(L)6-L

166MHz (*DDR333)

133MHz (*DDR266:2-2-2)

133MHz(*DDR266A)

133MHz(*DDR266B)

100MHz(*DDR200)

VDD=2.5V

VDDQ=2.5V

200pin Unbuffered SO-DIMM

67.6mm x 31.75mm x 1mm

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.3/Oct. 02

12 3 4 5 6 7...19

中文翻译

下载PDF

与HYMD216M726A6-M相关器件

型号	品牌	获取价格	描述	数据表
HYMD216M726AL6	ETC	获取价格	16Mx72\|2.5V\|J/M/K/H/L\|x5\|DDR SDRAM - SO DIMM 128MB
HYMD216M726AL6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726AL6-J	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726AL6-K	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726AL6-L	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726AL6-M	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726CL6-K	HYNIX	获取价格	DDR DRAM Module, 16MX72, 0.75ns, CMOS, SODIMM-200
HYMD216M726L6	ETC	获取价格	16Mx72\|2.5V\|K/H/L\|x5\|DDR SDRAM - SO DIMM 128MB
HYMD216M726L6-H	ETC	获取价格	SDRAM\|DDR\|16MX72\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M726L6-K	ETC	获取价格	SDRAM\|DDR\|16MX72\|CMOS\|DIMM\|200PIN\|PLASTIC

与HYMD216M726A6-M相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

HYMD216M726A6-M

HYMD216M726A6-M 技术参数

HYMD216M726A6-M 数据手册

与HYMD216M726A6-M相关器件

与HYMD216M726A6-M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HYMD216M726A6-M

HYMD216M726A6-M 技术参数

HYMD216M726A6-M 数据手册

与HYMD216M726A6-M相关器件

与HYMD216M726A6-M相关文章

您还可以找

您在本页遇到什么问题？