Datasheet > HYMD232646A8

HYMD232646A8

更新时间： 2024-11-10 23:57:31

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
16页	233K
描述
32Mx64\|2.5V\|M/K/H/L\|x8\|DDR SDRAM - Unbuffered DIMM 256MB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HYMD232646A8 数据手册

32Mx64 bits

Unbuffered DDR SDRAM DIMM

HYMD232646A(L)8-M/K/H/L

DESCRIPTION

Hynix HYMD232646A(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line

Memory Modules(DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646A(L)8-M/

K/H/L series consists of eight 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy sub-

strate.Hynix HYMD232646A(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor

of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD232646A(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs

are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-

ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.

All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and

burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD232646A(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

256MB (32M x 64) Unbuffered DDR DIMM based on

32Mx8 DDR SDRAM

•

Data inputs on DQS centers when write (centered

DQ)

•

JEDEC Standard 184-pin dual in-line memory mod-

ule (DIMM)

Data strobes synchronized with output data for read

and input data for write

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

•

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD232646A(L)8-M

HYMD232646A(L)8-K

HYMD232646A(L)8-H

HYMD232646A(L)8-L

133MHz (*DDR266:2-2-2)

133MHz (*DDR266A)

133MHz (*DDR266B)

100MHz (*DDR200)

VDD=2.5V

VDDQ=2.5V

184pin Unbuffered DIMM

5.25 x 1.25 x 0.15 inch

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.3/Jul. 02

12 3 4 5 6 7...16

中文翻译

下载PDF

与HYMD232646A8相关器件

型号	品牌	获取价格	描述	数据表
HYMD232646A8-H	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8J	ETC	获取价格	32Mx64\|2.5V\|J\|x8\|DDR SDRAM - Unbuffered DIMM 256MB
HYMD232646A8J-D4	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8J-D43	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8J-J	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8-K	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8-L	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646A8-M	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD232646AL8	ETC	获取价格	32Mx64\|2.5V\|M/K/H/L\|x8\|DDR SDRAM - Unbuffered DIMM 256MB
HYMD232646AL8-H	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM

与HYMD232646A8相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

HYMD232646A8

HYMD232646A8 数据手册

与HYMD232646A8相关器件

与HYMD232646A8相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HYMD232646A8

HYMD232646A8 数据手册

与HYMD232646A8相关器件

与HYMD232646A8相关文章

您还可以找

您在本页遇到什么问题？