Datasheet > HYMD216M646L6

HYMD216M646L6

更新时间： 2024-11-10 23:57:31

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
16页	289K
描述
16Mx64\|2.5V\|K/H/L\|x4\|DDR SDRAM - SO DIMM 128MB

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HYMD216M646L6 数据手册

16Mx64 bits

Unbuffered DDR SO-DIMM

HYMD216M646(L)6-K/H/L

DESCRIPTION

Hynix HYMD216M646(L)6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual

In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx64 high-speed memoryarrays. Hynix

HYMD216M646(L)6-K/H/L series consists of four 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 200pin glass-

epoxy substrate. Hynix HYMD216M646(L)6-K/H/L series provide a high performance 8-byte interface in 67.60mmX

31.75mm form factor of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD216M646(L)6-K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous oper-

ations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are

latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising

and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All

input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and

burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD216M646(L)6-K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x 64) Unbuffered DDR SO-DIMM based

on 16Mx16 DDR SDRAM

•

Data inputs on DQS centers when write (centered

DQ)

•

JEDEC Standard 200-pin small outline dual in-line

memory module (SO-DIMM)

Data strobes synchronized with output data for read

and input data for write

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

•

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD216M646(L)6-K

HYMD216M646(L)6-H

HYMD216M646(L)6-L

133MHz(*DDR266A)

133MHz(*DDR266B)

100MHz(*DDR200)

VDD=2.5V

VDDQ=2.5V

200pin Unbuffered SO-DIMM

67.6mm x 31.75mm x 3.8mm

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.5/May. 02

12 3 4 5 6 7...16

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与HYMD216M646L6相关器件

型号	品牌	获取价格	描述	数据表
HYMD216M646L6-H	ETC	获取价格	SDRAM\|DDR\|16MX64\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M646L6-K	ETC	获取价格	SDRAM\|DDR\|16MX64\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M646L6-L	ETC	获取价格	SDRAM\|DDR\|16MX64\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M7266	ETC	获取价格	16Mx72\|2.5V\|K/H/L\|x5\|DDR SDRAM - SO DIMM 128MB
HYMD216M7266-H	ETC	获取价格	SDRAM\|DDR\|16MX72\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M7266-K	ETC	获取价格	SDRAM\|DDR\|16MX72\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M7266-L	ETC	获取价格	SDRAM\|DDR\|16MX72\|CMOS\|DIMM\|200PIN\|PLASTIC
HYMD216M726A6	ETC	获取价格	16Mx72\|2.5V\|J/M/K/H/L\|x5\|DDR SDRAM - SO DIMM 128MB
HYMD216M726A6-H	HYNIX	获取价格	Unbuffered DDR SO-DIMM
HYMD216M726A6-J	HYNIX	获取价格	Unbuffered DDR SO-DIMM

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