Datasheet > 存储 > DRAM> HYMD216646AL6-M

HYMD216646AL6-M

更新时间： 2024-11-11 05:37:15

品牌	Logo	应用领域
海力士 - HYNIX		存储内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
16页	248K
描述
Unbuffered DDR SDRAM DIMM

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技术参数
数据手册

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HYMD216646AL6-M 技术参数

生命周期：	Obsolete	零件包装代码：	DIMM
包装说明：	DIMM, DIMM184	针数：	184
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.32	风险等级：	5.84
访问模式：	SINGLE BANK PAGE BURST	最长访问时间：	0.75 ns
其他特性：	AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	133 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-XDMA-N184
内存密度：	1073741824 bit	内存集成电路类型：	DDR DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	184
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	16MX64
输出特性：	3-STATE	封装主体材料：	UNSPECIFIED
封装代码：	DIMM	封装等效代码：	DIMM184
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
电源：	2.5 V	认证状态：	Not Qualified
刷新周期：	8192	自我刷新：	YES
子类别：	DRAMs	最大压摆率：	1.34 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	NO LEAD	端子节距：	1.27 mm
端子位置：	DUAL	Base Number Matches：	1

HYMD216646AL6-M 数据手册

16Mx64 bits

Unbuffered DDR SDRAM DIMM

HYMD216646A(L)6-M/K/H/L

DESCRIPTION

Hynix HYMD216646A(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Lin

Memory Modules (DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD216646A(L)6-M/K/

H/L series consists of four 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix

HMD216646A(L)6-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry

standard. It is suitable for easy interchange and addition.

Hynix HYMD216646A(L)6-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched hed on the rising edges of the clock, Data, Data strobes(UDQS/LDQS) and Write data masks(UDM/

LDM) inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit

prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High

speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance

memory system.

Hynix HYMD216646A(L)6-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x 64) Unbuffered DDR DIMM based on

16Mx16 DDR SDRAM

•

Data inputs on DQS centers when write (centered

DQ)

•

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

Data strobes synchronized with output data for read

and input data for write

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

Programmable CAS Latency 2 / 2.5 supported

All inputs and outputs are compatible with SSTL_2

interface

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

•

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD216646A(L)6-M

HYMD216646A(L)6-K

HYMD216646A(L)6-H

HYMD216646A(L)6-L

133MHz (*DDR266:2-2-2)

133MHz (*DDR266A)

133MHz (*DDR266B)

100MHz (*DDR200)

VDD=2.5V

VDDQ=2.5V

184pin Unbuffered DIMM

5.25 x 1.25 x 0.15 inch

SSTL_2

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.2/May. 02

12 3 4 5 6 7...16

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与HYMD216646AL6-M相关器件

型号	品牌	获取价格	描述	数据表
HYMD216646AL6R-H	HYNIX	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA184,
HYMD216646AL6R-K	HYNIX	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA184,
HYMD216646C6J-D4	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD216646C6J-D43	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD216646C6J-J	HYNIX	获取价格	Unbuffered DDR SDRAM DIMM
HYMD216646CL6-L	HYNIX	获取价格	DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184
HYMD216646D6-H	HYNIX	获取价格	1184pin Unbuffered DDR SDRAM DIMMs
HYMD216646D6J-D43	HYNIX	获取价格	1184pin Unbuffered DDR SDRAM DIMMs
HYMD216646D6J-J	HYNIX	获取价格	1184pin Unbuffered DDR SDRAM DIMMs
HYMD216646D6-K	HYNIX	获取价格	1184pin Unbuffered DDR SDRAM DIMMs

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