是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 5.4 ns | 最大时钟频率 (fCLK): | 166 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 2,4,8,16 |
JESD-30 代码: | R-PBGA-B60 | 内存密度: | 536870912 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
端子数量: | 60 | 字数: | 33554432 words |
字数代码: | 32000000 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 32MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA60,9X10,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.8 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 2,4,8,16 |
最大待机电流: | 0.0005 A | 子类别: | DRAMs |
最大压摆率: | 0.11 mA | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HYE18M512160AF-7.5 | INFINEON |
获取价格 |
DDR DRAM, 32MX16, 6.5ns, CMOS, PBGA60 |
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HYE18M512160AF-8 | INFINEON |
获取价格 |
DDR DRAM, 32MX16, 7ns, CMOS, PBGA60 |
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HYE18M512160BF-6 | QIMONDA |
获取价格 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant |
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HYE18M512160BF-7.5 | QIMONDA |
获取价格 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant |
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HYE18P16161AC | INFINEON |
获取价格 |
16M Asynchronous/Page CellularRAM |
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HYE18P16161AC-60 | INFINEON |
获取价格 |
MEMORY SPECTRUM |
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HYE18P16161AC-70 | INFINEON |
获取价格 |
16M Asynchronous/Page CellularRAM |
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HYE18P16161AC-85 | INFINEON |
获取价格 |
16M Asynchronous/Page CellularRAM |
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HYE18P16161ACL70 | INFINEON |
获取价格 |
16M Asynchronous/Page CellularRAM |
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HYE18P16161AC-L70 | INFINEON |
获取价格 |
Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA48, PLASTIC, VFBGA-48 |
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