是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, BGA48,6X8,30 |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.6 | 最长访问时间: | 70 ns |
其他特性: | SYNCHRONOUS OPERATION ALSO POSSIBLE | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e0 |
长度: | 8 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | PSEUDO STATIC RAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 1MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 1.8,1.8/3 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大待机电流: | 0.000025 A | 最小待机电流: | 1.7 V |
子类别: | Other Memory ICs | 最大压摆率: | 0.02 mA |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HYE18P16161ACL85 | INFINEON |
获取价格 |
16M Asynchronous/Page CellularRAM | |
HYE18P16161AC-L85 | INFINEON |
获取价格 |
Pseudo Static RAM, 1MX16, 85ns, CMOS, PBGA48, PLASTIC, VFBGA-48 | |
HYE18P32160AC | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160AC-125 | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160AC-15 | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160AC-96 | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160AC-L12.5 | INFINEON |
获取价格 |
Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, PLASTIC, VFBGA-54 | |
HYE18P32160ACL125 | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160ACL15 | INFINEON |
获取价格 |
32M Synchronous Burst CellularRAM | |
HYE18P32160AC-L15 | INFINEON |
获取价格 |
Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA54, 6 X 8 MM, PLASTIC, VFBGA-54 |